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TGF4230-EPU

Texas Instruments

TGF4230-EPU by Texas Instruments

TGF4230-EPU by Texas Instruments is an N-CHANNEL RF Power FET for X BAND applications. Features HETERO-JUNCTION tech with GALLIUM ARSENIDE material. Surface mount, 4 terminals, RECTANGULAR package ideal for high-frequency circuit designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,077 parts In-Stock

1+ parts

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6,077

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Digiode

USA . 4,039 parts In-Stock

1+ parts

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4,039

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PC Components Company LLC

USA . 40 parts In-Stock

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40

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Bristol Electronics

USA . 40 parts In-Stock

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40

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,822 parts In-Stock

1+ parts

$1.044

100+ parts

-

1k+ parts

$1.908

10k+ parts

-

1,822

$1.044

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$1.908

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DigiPath Technology Company

USA . 1,685 parts In-Stock

1+ parts

$1.150

100+ parts

$1.058

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-

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1,685

$1.150

$1.058

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IDEA Electronic Components Group

UK . 1,368 parts In-Stock

1+ parts

$1.173

100+ parts

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$1.056

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1,368

$1.173

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$1.056

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ChromeModa Solutions

Germany . 89 parts In-Stock

1+ parts

$1.173

100+ parts

$0.962

1k+ parts

-

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89

$1.173

$0.962

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AZTECH Wire

Italy . 754 parts In-Stock

1+ parts

$14.966

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754

$14.966

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One Stop Electronics

USA . 420 parts In-Stock

1+ parts

$61.050

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420

$61.050

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 389 parts In-Stock

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389

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Overview

Experience the power of cutting-edge technology with the TGF4230-EPU by Texas Instruments. As a leader in RF Power Field Effect Transistors, Texas Instruments delivers superior quality and reliability. This N-CHANNEL transistor is perfect for X Band applications, offering unmatched performance and efficiency. Say goodbye to technical headaches and hello to seamless integration with this surface mount chip. Upgrade your projects with the TGF4230-EPU and unlock a world of possibilities.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL type provides better performance and efficiency for RF applications compared to P-CHANNEL transistors.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving space and reducing overall product size.

Package Shape: RECTANGULAR

Rectangular package shape enables easier integration and placement on circuit boards, optimizing layout design.

Terminal Form: NO LEAD

No-lead terminals provide improved thermal performance and reliability, reducing the chances of solder joints failing.

Highest Frequency Band: X BAND

X Band frequency range offers high performance at microwave frequencies, suitable for applications requiring fast signal processing.

No. of Terminals: 4

Four terminals provide improved connectivity and control over the transistor's operation, enhancing overall functionality.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in mounting and heat dissipation, making it suitable for various RF power applications.

Field Effect Transistor Technology: HETERO-JUNCTION

Hetero-junction technology provides higher electron mobility and better performance in RF power amplification applications.

Transistor Element Material: GALLIUM ARSENIDE

Gallium Arsenide material offers high electron mobility and low noise characteristics, resulting in excellent RF performance.

Terminal Position: UPPER

Upper terminal position allows for easier and more secure connections, enhancing overall reliability and signal integrity.

Technical Specifications

RF Power Field Effect Transistors (FET) TGF4230-EPU attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

X BAND

JESD-30 Code:

R-XUUC-N4

No. of Terminals:

4

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TGF4230-EPU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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