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LET16060C

STMicroelectronics

LET16060C by STMicroelectronics

LET16060C by STMicroelectronics is a N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, 12A Drain Current, and 100W Power Dissipation. It's used in L BAND applications as an amplifier in enhancement mode operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,448 parts In-Stock

1+ parts

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3,448

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Anansix

USA . 2,744 parts In-Stock

1+ parts

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2,744

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Vyrian

USA . 2,728 parts In-Stock

1+ parts

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2,728

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,094 parts In-Stock

1+ parts

$1.056

100+ parts

-

1k+ parts

$0.951

10k+ parts

-

1,094

$1.056

-

$0.951

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MKK Technologies

India . 825 parts In-Stock

1+ parts

$1.986

100+ parts

-

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825

$1.986

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DigiPath Technology Company

USA . 825 parts In-Stock

1+ parts

$1.986

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-

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825

$1.986

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AZTECH Wire

Italy . 555 parts In-Stock

1+ parts

$12.590

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555

$12.590

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Parana Technologies

USA . 2,123 parts In-Stock

1+ parts

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100+ parts

$1.263

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2,123

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$1.263

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Corphita

USA . 1,705 parts In-Stock

1+ parts

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1,705

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Perfect Parts

USA . 77 parts In-Stock

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77

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Overview

Elevate your RF power applications with the LET16060C by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics guarantees top-notch quality and reliability. This N-channel FET amplifier offers superior performance and efficiency, making it ideal for a wide range of applications. From enhancing signal strength to improving overall system functionality, the LET16060C delivers exceptional value and benefits to customers looking to elevate their RF power capabilities. Trust STMicroelectronics to provide you with the innovative solutions you need for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and protection for the transistor, ensuring a longer lifespan in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel field effect transistors generally have better performance characteristics and lower on-resistance compared to P-channel transistors, making this product a good choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and application of the transistor, making it easier to integrate into amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this field effect transistor offers high performance and efficiency in amplifying signals.

Surface Mount: YES

The surface-mount capability of this transistor allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 80 V

With a minimum breakdown voltage of 80V, this transistor can handle high voltage inputs, making it suitable for amplifier applications where voltage levels can vary.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low power consumption, making this transistor ideal for applications where fast response and efficiency are required.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high-temperature environments, ensuring reliable performance in demanding conditions.

Technical Specifications

RF Power Field Effect Transistors (FET) LET16060C attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LET16060C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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