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MRFE6S9045NR1

NXP Semiconductors

MRFE6S9045NR1 by NXP Semiconductors

NXP Semiconductors' MRFE6S9045NR1 is a single N-channel RF FET with 66V DS breakdown voltage. Ideal for amplifier applications in the UHF band, it operates in enhancement mode at up to 225°C. This flatpack transistor features metal-oxide semiconductor technology and tin terminal finish for high performance.

Median Price

$29.660

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,100 parts In-Stock

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$29.660

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$27.880

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$25.210

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$29.660

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Distributors (In-Stock)

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Digiode

USA . 1,765 parts In-Stock

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$28.177

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Nova Conductors

Japan . 50 parts In-Stock

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$42.966

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Chip Stock

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Vyrian

USA . 694 parts In-Stock

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Anansix

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Inventory MP

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Bristol Electronics

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 15,338 parts In-Stock

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$0.585

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$0.585

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$0.585

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$0.585

$0.585

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Aztec Data Supply Inc.

USA . 999 parts In-Stock

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$0.670

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Corohmni

South Africa . 137 parts In-Stock

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$1.807

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Ampacity Inc.

Singapore . 874 parts In-Stock

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$25.210

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Semicontronic

India . 746 parts In-Stock

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$25.210

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$24.580

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$24.454

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One Stop Electronics

USA . 611 parts In-Stock

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Corphita

USA . 3,056 parts In-Stock

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$26.694

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Continental Prestige Electronics

USA . 2,124 parts In-Stock

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$42.700

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$41.846

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Netroflash

USA . 100 parts In-Stock

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S.R.D Solutions

India . 23,000 parts In-Stock

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Argo Parts USA

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UNI Independent Distributors

Spain . 2,755 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 1,806 parts In-Stock

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Overview

Upgrade your RF power amplifier with the MRFE6S9045NR1 from NXP Semiconductors. Known for their high-quality semiconductor products, NXP delivers reliable performance and durability. This RF Power FET offers enhanced efficiency and power, making it ideal for amplifier applications in the ultra-high frequency band. With a minimum breakdown voltage of 66V and operating temperature up to 225°C, this single-channel transistor provides unmatched value and benefits for your amplifier needs. Experience superior performance with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and resistance to environmental factors, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and speed compared to P-channel transistors, making them ideal for high-frequency applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 66 V

With a high breakdown voltage, the transistor can handle higher voltages without failure, ensuring reliable operation in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low power consumption, making the transistor efficient and suitable for high-frequency applications.

Maximum Operating Temperature: 225 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures without performance degradation, ensuring reliable operation in various environments.

Technical Specifications

RF Power Field Effect Transistors (FET) MRFE6S9045NR1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

66 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-270

JESD-30 Code:

R-PDFP-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRFE6S9045NR1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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