Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
Median Price
-
Lifecycle Status
Suppliers In-Stock
3
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
Anansix
Advanced Electronics
$0.425
$0.387
$0.348
IDEA Electronic Components Group
$1.220
$1.098
MKK Technologies
$2.294
DigiPath Technology Company
AZTECH Wire
$17.920
Component Stockers USA
$99.990
Authorized Procurement Solutions
QUARKTWIN TECHNOLOGY LTD
Corphita
Kepictronics
Metaverse IC Inc.
Parana Technologies
$1.459
The plastic/epoxy body material offers excellent durability and resistance to environmental factors, making it suitable for various applications.
The N-channel configuration allows for greater efficiency in switching and amplification functions, making it ideal for high-performance applications.
A single configuration simplifies circuit design and integration, reducing space and potential points of failure in electronic systems.
Designed for amplification, this FET is capable of delivering high gain and linearity, crucial for audio and RF applications.
Being surface mount enhances PCB space efficiency and is compatible with automated assembly processes, facilitating mass production.
A minimum breakdown voltage of 40V ensures that the device can handle higher voltages without risking damage, making it suitable for demanding applications.
The rectangular shape allows for efficient use of PCB space and simplifies placement in a variety of electronic enclosures.
Gull wing leads provide excellent stability during mounting and soldering, ensuring reliable connections in the circuit.
The enhancement mode operation leads to better control over the on/off state, providing higher efficiency in applications requiring fast switching.
Operating in the ultra-high frequency band enables this FET to be utilized in advanced communication systems, RF applications, and high-resolution signal processing.
A high maximum drain current of 8A allows for the handling of substantial power levels, making it ideal for high-current applications.
With only 2 terminals, this FET enables straightforward integration into circuits, reducing complexity and potential failure points.
With a maximum power dissipation of 95W, the transistor can operate efficiently under high power conditions without overheating.
The small outline package style allows for compact circuit designs, making it easy to fit into modern, space-constrained devices.
MOS technology provides high input impedance and low power consumption, making this FET versatile and efficient.
A high operating temperature limit of 165 °C ensures reliability and performance in demanding conditions across diverse applications.
Silicon as the element material enables the FET to perform reliably in a variety of electronic applications, balancing performance and cost.
Matte tin finish provides good solderability and corrosion resistance, ensuring reliable long-term performance in the field.
Reiterating the 8A capability confirms its robustness for high-drain applications, perfect for powering demanding electronic devices.
The dual terminal position enhances circuit design flexibility, supporting a wide range of configurations and setups.
An MSL of 3 indicates moderate sensitivity to moisture, guiding proper handling and storage procedures to maintain product longevity.
The source case connection simplifies the layout of circuits and aids in thermal management, essential for maintaining performance.
RF Power Field Effect Transistors (FET) PD84010TR-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
PD84010TR-E Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev OBS 27/Nov/2018
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SMBJ18CA
Zowie Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Thinking Electronic Industrial
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
2N2222A
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM317T
Texas Instruments
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
1N4148
Laube Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
MBR0530T1G
MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.
ABS06-32.768KHZ-T
Abracon
Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
SD2942W
SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
FLL177ME
Fujitsu
Fujitsu FLL177ME is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring DEPLETION MODE operation, it offers 7.5W Max Power Dissipation at 175°C max temp, housed in a CERAMIC/METAL-SEALED COFIRED package with FLANGE MOUNT style.
SD56120
SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
BLF246B,112
NXP Semiconductors
NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.
RF5L05950CF2
RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;
PD57030
PD57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
SD2931-10
SD2931-10 by STMicroelectronics is an N-channel RF Power FET with a 125V DS breakdown voltage and 20A max drain current. Ideal for UHF applications, it operates in enhancement mode with a max power dissipation of 389W. The transistor features a plastic/epoxy package body, flat terminals, and nickel palladium gold finish.
PD55003S-E
STMicroelectronics PD55003S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND. This SINGLE configuration transistor comes in a PLASTIC/EPOXY package with Matte Tin finish, suitable for surface mount assembly.
MRF151
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 200 Cel; JESD-30 Code: O-CRFM-F4;
MRF1570FNT1
NXP Semiconductors' MRF1570FNT1 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It features a common source configuration, with a max power dissipation of 165W and a min DS breakdown voltage of 40V. Ideal for amplifier applications, this transistor has a package style of flange mount and operates in enhancement mode at temperatures up to 200°C.
934065325112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MW6S010GNR1
NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
A5G35S008N-3400
RF Power Field-Effect Transistors;
LET21030C
LET21030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the S band. This surface-mount transistor ensures efficient performance up to 200 °C.
BLF278
The NXP Semiconductors BLF278 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, 20dB Power Gain, and 500W Power Dissipation. Commonly used in amplifier applications for the VHF band due to its high power handling capabilities and dual-terminal configuration.
RF2L27015CG2
MRFE6S9045NR1
NXP Semiconductors' MRFE6S9045NR1 is a single N-channel RF FET with 66V DS breakdown voltage. Ideal for amplifier applications in the UHF band, it operates in enhancement mode at up to 225°C. This flatpack transistor features metal-oxide semiconductor technology and tin terminal finish for high performance.
PD57070
PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
RF2L16080CF2
MRF6VP2600HR6
NXP Semiconductors' MRF6VP2600HR6 is a N-CHANNEL RF Power FET with 110V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features METAL-OXIDE SEMICONDUCTOR tech, operates at up to 225°C, and has a FLANGE MOUNT package style.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PD84002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
PD84006-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;
PD84006L-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 25 V;
PD84008-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Drain Current (ID): 7 A; Maximum Operating Temperature: 165 Cel;
PD84008L-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26.7 W; Package Shape: SQUARE; Terminal Position: QUAD;
PD84008S-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
PD84008STR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE;
PD84008TR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Qualification: Not Qualified; Additional Features: HIGH RELIABILITY;
PD84010-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
PD84010S-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
PD84010STR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 8 A;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved