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A2G22S251-01SR3

NXP Semiconductors

A2G22S251-01SR3 by NXP Semiconductors

NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$71.580

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,286 parts In-Stock

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$71.580

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$64.050

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$60.280

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$71.580

$64.050

$60.280

Distributors (In-Stock)

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Digiode

USA . 1,248 parts In-Stock

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$75.554

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Nova Conductors

Japan . 500 parts In-Stock

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$81.889

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Flip Electronics

USA . 4,750 parts In-Stock

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Vyrian

USA . 4,425 parts In-Stock

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VNN

France . 921 parts In-Stock

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Anansix

USA . 862 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,109 parts In-Stock

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$0.654

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Corohmni

South Africa . 320 parts In-Stock

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$1.156

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AZTECH Wire

Italy . 1,089 parts In-Stock

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$8.580

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Ampacity Inc.

Singapore . 225 parts In-Stock

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$67.600

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Corphita

USA . 249 parts In-Stock

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$71.577

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Continental Prestige Electronics

USA . 2,961 parts In-Stock

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$81.889

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$80.251

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Netroflash

USA . 50 parts In-Stock

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Microchip USA

USA . 7,373 parts In-Stock

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Argo Parts USA

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UNI Independent Distributors

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Overview

Experience superior performance and reliability with the A2G22S251-01SR3 RF Power Field Effect Transistor by NXP Semiconductors. This single N-channel transistor is designed for amplifier applications in the S Band, offering a power gain of 16.2 dB. With a ceramic, metal-sealed co-fired package and gallium nitride element material, this transistor ensures high-quality operation even in extreme temperatures ranging from -55°C to 225°C. Trust NXP Semiconductors' expertise in semiconductor technology to deliver cutting-edge solutions for your RF power needs. Upgrade your amplifier systems with the A2G22S251-01SR3 for unparalleled performance and efficiency.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides durability and protection for the transistor, making it suitable for rugged environments.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are commonly used for high-frequency applications, offering good performance and efficiency.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into the circuit, making it easier to work with.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy mounting on circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 150 V

The minimum breakdown voltage of 150V ensures reliable operation and protection against voltage spikes.

Minimum Power Gain (Gp): 16.2 dB

The high power gain of 16.2 dB indicates efficient signal amplification and strong performance in amplification tasks.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and placement on the circuit board, facilitating a compact layout.

Terminal Form: FLAT

The flat terminal form ensures a secure and stable connection, minimizing the risk of signal loss or interference.

Operating Mode: DEPLETION MODE

Depletion mode operation offers precise control over the transistor's conductance, enabling accurate amplification and signal processing.

Highest Frequency Band: S BAND

Designed for use in the S band frequency range, suitable for applications requiring high-frequency signal amplification.

No. of Terminals: 2

The two-terminal configuration simplifies the connection and usage of the transistor in the circuit, reducing complexity.

Package Style (Meter): FLATPACK

The flatpack package style offers a compact and slim profile, ideal for space-constrained applications and designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and efficiency, making the transistor reliable and effective in operation.

Maximum Operating Temperature: 225 °C

The high maximum operating temperature of 225°C ensures the transistor can withstand elevated operating conditions without performance degradation.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride material offers high electron mobility and power handling capabilities, enhancing the transistor's performance and reliability.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows the transistor to operate efficiently in cold environments without issues.

Terminal Position: DUAL

The dual terminal position provides flexibility in the connection and orientation of the transistor, making it versatile in different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and reliability during the assembly process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C guarantees secure and durable solder joints, maintaining the integrity of the transistor in the long run.

Technical Specifications

RF Power Field Effect Transistors (FET) A2G22S251-01SR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

150 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

16.2 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

A2G22S251-01SR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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