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PD84006L-E

STMicroelectronics

PD84006L-E by STMicroelectronics

STMicroelectronics PD84006L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 5A Drain Current, and 31W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.

Median Price

$8.760

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,334 parts In-Stock

1+ parts

$8.760

100+ parts

$5.776

1k+ parts

$5.239

10k+ parts

$4.846

2,334

$8.760

$5.776

$5.239

$4.846

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 141 parts In-Stock

1+ parts

$8.322

100+ parts

-

1k+ parts

-

10k+ parts

-

141

$8.322

-

-

-

Vyrian

USA . 2,773 parts In-Stock

1+ parts

$8.760

100+ parts

-

1k+ parts

-

10k+ parts

-

2,773

$8.760

-

-

-

Anansix

USA . 690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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690

-

-

-

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ACDS - Activité Composants Distribution Service

France . 350 parts In-Stock

1+ parts

-

100+ parts

-

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350

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,751 parts In-Stock

1+ parts

$0.428

100+ parts

-

1k+ parts

$0.385

10k+ parts

-

1,751

$0.428

-

$0.385

-

MKK Technologies

India . 1,335 parts In-Stock

1+ parts

$0.804

100+ parts

-

1k+ parts

-

10k+ parts

-

1,335

$0.804

-

-

-

DigiPath Technology Company

USA . 1,335 parts In-Stock

1+ parts

$0.804

100+ parts

-

1k+ parts

-

10k+ parts

-

1,335

$0.804

-

-

-

Ampacity Inc.

Singapore . 2,217 parts In-Stock

1+ parts

$7.450

100+ parts

-

1k+ parts

-

10k+ parts

-

2,217

$7.450

-

-

-

Corphita

USA . 2,585 parts In-Stock

1+ parts

$7.884

100+ parts

-

1k+ parts

-

10k+ parts

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2,585

$7.884

-

-

-

Component Stockers USA

USA . 1,820 parts In-Stock

1+ parts

$9.030

100+ parts

$6.750

1k+ parts

$5.120

10k+ parts

-

1,820

$9.030

$6.750

$5.120

-

RC Electronics

USA . 34,338 parts In-Stock

1+ parts

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34,338

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Perfect Parts

USA . 31,223 parts In-Stock

1+ parts

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31,223

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

1+ parts

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100+ parts

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30,000

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A-Z Elektronik GmbH

Germany . 2,953 parts In-Stock

1+ parts

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1k+ parts

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2,953

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-

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Parana Technologies

USA . 2,035 parts In-Stock

1+ parts

-

100+ parts

$0.512

1k+ parts

-

10k+ parts

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2,035

-

$0.512

-

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Microchip USA

USA . 253 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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253

-

-

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Overview

Experience superior performance and reliability with the PD84006L-E RF Power Field Effect Transistor from STMicroelectronics. Designed for amplifier applications in the ultra-high frequency band, this N-CHANNEL transistor offers a breakthrough in power efficiency and quality. With a maximum power dissipation of 31W and an operating temperature of up to 150°C, this enhancement mode FET delivers unmatched value and benefits to customers seeking cutting-edge technology in a compact, surface-mount package. Trust STMicroelectronics to elevate your RF power applications to new heights of excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, extending the lifespan of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher conductivity, making them efficient for many applications.

Configuration: SINGLE

Simplifies circuit design and allows for easier integration into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring high performance in signal boosting applications.

Minimum DS Breakdown Voltage: 25 V

Can handle relatively high voltage levels, making it suitable for various power applications.

Package Shape: SQUARE

Space-efficient design that allows for compact placement on circuit boards.

Surface Mount: YES

Enables easy and efficient soldering onto circuit boards, saving time and effort during assembly.

Maximum Drain Current (ID): 5 A

Capable of handling high current levels, making it suitable for power-intensive applications.

Maximum Power Dissipation (Abs): 31 W

Can dissipate heat effectively, preventing overheating and ensuring stable performance.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, making it suitable for demanding environments.

Technical Specifications

RF Power Field Effect Transistors (FET) PD84006L-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD84006L-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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