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FLL57MK

Fujitsu

FLL57MK by Fujitsu

Fujitsu's FLL57MK is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring CERAMIC, METAL-SEALED COFIRED package and 21.4W power dissipation at 175°C, it offers reliable performance in DEPLETION MODE operation.

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5

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Vyrian

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Lantek

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Nova Conductors

Japan . 10 parts In-Stock

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LWI Electronics Inc

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Corohmni

South Africa . 321 parts In-Stock

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$1.790

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Aztec Data Supply Inc.

USA . 4,680 parts In-Stock

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$1.940

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AZTECH Wire

Italy . 474 parts In-Stock

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$14.280

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

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GreenTree Electronics

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Overview

Enhance your amplifier performance with the FLL57MK RF Power Field Effect Transistor by Fujitsu. Known for their top-quality electronic components, Fujitsu delivers a product that offers unparalleled reliability and efficiency. Ideal for applications in the L BAND frequency range, this single N-CHANNEL transistor boasts a minimum DS Breakdown Voltage of 15V and maximum Power Dissipation of 21.4W. With its ceramic, metal-sealed cofired package body material and flat terminal form, the FLL57MK is designed to meet all your amplification needs. Experience the difference with Fujitsu's cutting-edge technology and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material provides good thermal conductivity and ruggedness, making the transistor suitable for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have lower ON-resistance and higher current carrying capability, making them efficient for amplification purposes.

Transistor Application: AMPLIFIER

Designed specifically for use as an amplifier, ensuring optimal performance in amplification circuits.

Highest Frequency Band: L BAND

Suitable for operating in the L Band frequency range, making it ideal for communication and radar applications in this frequency range.

Maximum Power Dissipation Ambient: 21.4 W

With a high maximum power dissipation, this transistor can handle high power levels efficiently without risk of damage.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures up to 175°C, ensuring reliability in various environmental conditions.

Technical Specifications

RF Power Field Effect Transistors (FET) FLL57MK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Fujitsu

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

21.4 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

FLL57MK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Fujitsu

Fujitsu Ltd delivers total solutions in the field of information and communication technology. The company provides solutions/system integration services focused on information system consulting and construction, and infrastructure services centered on outsourcing services. Fujitsu provides services across a wide range of countries and regions, including Europe, the Americas, Asia, and Oceania. It operates in three segments namely, Technology Solutions; Ubiqitous Solutions and Device Solutions. Ubiquitous Solutions consists of PCs, mobile phones, and mobilewear. In PCs, Fujitsu's lineup includes desktop and laptop PCs known for energy efficiency, security, and other enhanced features, as well as water- and dust-resistant tablets.

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