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ATF-50189-BLK

Broadcom

ATF-50189-BLK by Broadcom

Broadcom's ATF-50189-BLK is an N-channel RF FET with 7V DS breakdown voltage, 14dB power gain, and operating mode in enhancement. Ideal for C band applications, this transistor has a max drain current of 1A and operates at up to 150°C temperature.

Median Price

$3.146

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Nova Conductors

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Aztec Data Supply Inc.

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Argo Parts USA

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Continental Prestige Electronics

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Netroflash

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AZTECH Wire

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Overview

Power up your RF applications with the ATF-50189-BLK by Broadcom. This high-quality RF Power Field Effect Transistor offers reliable performance and power gain, making it perfect for amplifier applications in the C band. With a single configuration and a maximum operating temperature of 150°C, this enhancement mode transistor provides value and efficiency to your projects. Trust Broadcom for top-notch technology that delivers results. Elevate your RF designs with the ATF-50189-BLK today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant to environmental factors, ensuring a long lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and conduction efficiency compared to P-channel transistors, making them suitable for high-performance applications.

Configuration: SINGLE

Simplified design and easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, ensuring high performance in amplification applications.

Surface Mount: YES

Easy to solder onto circuit boards, making it suitable for automated assembly processes.

Minimum DS Breakdown Voltage: 7 V

Can handle higher voltages without breakdown, providing reliability in high voltage applications.

Minimum Power Gain (Gp): 14 dB

Provides significant amplification of input signals, crucial for high-performance applications.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility results in faster switching speeds and lower on-state resistance, improving overall performance of the transistor.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for demanding industrial environments.

Technical Specifications

RF Power Field Effect Transistors (FET) ATF-50189-BLK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Broadcom

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JEDEC-95 Code:

MO-229

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

14 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

ATF-50189-BLK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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