Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
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RF Power Field Effect Transistors (FET) AFT18H356-24SR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
Peak Reflow Temperature (C):
Maximum Time At Peak Reflow Temperature (s):
AFT18H356-24SR6 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
M39029/56-351
Carlisle Interconnect Technologies
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;
Diotec Semiconductor Ag
LM358DT
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
1N4148WT
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
EU2B-YS303C
Idec
ROTARY SWITCH;
BLF878
NXP Semiconductors
The NXP Semiconductors BLF878 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 89V. It operates in the Ultra High Frequency Band and features a COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR device has a FLANGE MOUNT package style and can withstand peak reflow temperatures up to 260°C.
A2T18S165-12SR3
PD57006TR-E
PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
A2T07H310-24SR6
PD55008-E
STMicroelectronics' PD55008-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 4A Drain Current. The PLASTIC/EPOXY package has GULL WING terminals, SMALL OUTLINE style, and can handle up to 52.8W power dissipation at 165°C max temperature.
934064594118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; Transistor Element Material: SILICON;
BLF175
BLF175 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage. Operating in the very high frequency band, it has a max drain current of 4A and power dissipation of 68W. Ideal for amplifier applications, this MOSFET features an isolated case connection and operates at up to 200°C.
CG2H40010F
Wolfspeed
Wolfspeed's CG2H40010F is an N-CHANNEL RF FET with 84V DS Breakdown Voltage, 15dB Power Gain for AMPLIFIER applications in C BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE, with max. temp of 150°C and drain current of 1.5A.
A2G35S160-01SR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
STAC2932F
STAC2932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.
MRFE6VP5150NR1
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 133 V; Moisture Sensitivity Level (MSL): 3; JESD-30 Code: R-PDFM-F4;
MRF374
The NXP Semiconductors MRF374 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 12.5 dB Power Gain, and operates in the Ultra High Frequency Band. Commonly used as an AMPLIFIER in ENHANCEMENT MODE, it has a max Drain Current of 7A and can operate at temperatures up to 200°C.
TIM1011-8UL
Toshiba
Toshiba's TIM1011-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for X-band applications. Featuring a max drain current of 5.7A and a power dissipation of 40.5W, this transistor operates in depletion mode and has a ceramic-metal-sealed co-fired package body suitable for amplifier configurations.
GS66516B-MR
Gan Systems
GS66516B-MR by Gan Systems is a P-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at 60A ID. This RF transistor in CHIP CARRIER package offers VERY HIGH FREQUENCY performance.
FLU35XM
Fujitsu Semiconductor America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;
MRF141G
Tyco Electronics M/a-com
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
SD2942W
SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
BLF861A,112
NXP Semiconductors' BLF861A,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18A Drain Current. Commonly used in amplifiers for Ultra High Frequency applications, it features a CERAMIC, METAL-SEALED COFIRED package and operates in Enhancement Mode up to 200°C.
PD60030
PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
TIM1414-18L
The Toshiba TIM1414-18L is an N-channel RF Power FET with a ceramic/metal-sealed co-fired package. It operates in depletion mode, ideal for amplifier applications in the Ku band. With a max drain current of 11.5A and power dissipation of 60W, it offers high performance in a flange mount package.
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AFT18H357-24NR6
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Terminal Finish: TIN;
AFT18H357-24SR6
AFT18HW355SR5
NXP Semiconductors AFT18HW355SR5 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 125°C, withstands peak reflow temp of 260°C for 40s. Ideal for high-frequency applications in industries like telecommunications and radar systems.
AFT18HW355SR5,178
RF Power Field-Effect Transistors;
AFT18HW355SR6
N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 125 Cel;
AFT18P350-4S2LR6
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260;
AFT18S230-12NR3
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
AFT18S230SR3
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
AFT18S230SR5
N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 40;
AFT18S260W31GSR3
AFT18S260W31SR3
AFT18S290-13SR3
N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 125 Cel;
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
AFT18H356-24SR6
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