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TGI7785-25L

Toshiba

TGI7785-25L by Toshiba

Toshiba's TGI7785-25L is an N-channel RF Power FET with a 50V DS breakdown voltage, ideal for X-band applications. Featuring a 4.5A drain current and 70W power dissipation, this DEPLETION MODE transistor is designed for amplifier use in high-frequency circuits. Its CERAMIC, METAL-SEALED COFIRED package ensures reliable performance in demanding environments.

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Overview

Unlock the power of cutting-edge technology with the TGI7785-25L by Toshiba. Designed with precision and expertise, this RF Power Field Effect Transistor offers unparalleled performance for amplifier applications in the X Band frequency range. With a maximum power dissipation of 70W and a minimum DS breakdown voltage of 50V, this N-Channel transistor delivers reliability and efficiency like never before. Experience seamless integration and top-notch quality with Toshiba's ceramic, metal-sealed cofired package body material. Elevate your projects with the TGI7785-25L and enjoy superior results every time.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material ensures durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have higher mobility and conductivity compared to P-Channel transistors.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, making it ideal for use in RF power amplifiers.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this transistor can handle high voltage applications with ease.

Highest Frequency Band: X BAND

Optimized for X band frequencies, making it suitable for high-frequency RF applications.

Maximum Drain Current (ID): 7.5 A

Capable of handling high drain currents, making it suitable for high-power applications.

Maximum Power Dissipation Ambient: 70 W

With a high power dissipation capability, this transistor can withstand high power levels without overheating.

Technical Specifications

RF Power Field Effect Transistors (FET) TGI7785-25L attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

7.5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

X BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

70 W

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

TGI7785-25L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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