Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
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Provides good protection for the internal components and helps in maintaining the overall durability of the product.
N-Channel FETs typically offer better performance compared to P-Channel FETs, making this product a good choice for various applications.
Simplifies the design and allows for easy integration into different circuit configurations.
Designed specifically for amplification purposes, ensuring optimal performance in amplification circuits.
Enables easy and efficient mounting on PCBs, saving space and facilitating automated assembly.
The high maximum drain current allows for handling higher power levels, making this FET suitable for power amplifier applications.
With a high maximum power dissipation, this FET can handle significant power levels without overheating.
MOSFET technology offers high input impedance and fast switching speeds, making it ideal for various applications requiring high performance.
With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising performance.
RF Power Field Effect Transistors (FET) PD54008TR-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics
Additional Features:
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
PD54008TR-E Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Line Transfer 06/Oct/2020
PCN Packaging - Box Label Chg 28/Jul/2016 Material Barrier Bag 17/Dec/2020
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM555CM
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148
Surge Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;
ABS06-32.768KHZ-T
Abracon
Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.
2N2222A
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
LL4148
Rfe International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Hy Electronic
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Eic Semiconductor
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
BSS84-7-F
Diodes Incorporated
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
Micro Commercial Components
934065321118
NXP Semiconductors
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRFE6VP5600HR6
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Minimum DS Breakdown Voltage: 130 V; JESD-30 Code: R-CDFM-F4;
LET21008
STMicroelectronics
LET21008 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at frequencies in the S band, and supports a max drain current of 2A. Ideal for high-performance surface mount designs.
SD2933
SD2933 by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 40A Drain Current. It operates in ULTRA HIGH FREQUENCY BAND, suitable for high-power applications like amplifiers and transmitters. The transistor features METAL-OXIDE SEMICONDUCTOR technology and can handle up to 648W power dissipation at 200 °C.
MW6S010GNR1
NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
BLF861A
The NXP Semiconductors BLF861A is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a COMMON SOURCE configuration, it has a max Drain Current of 18A and can handle up to 318W power dissipation at 200°C.
RF4L15400CB4
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
AFT26H250-24SR6
N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;
PD54008-E-E
PD54008-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
PD84008STR-E
PD84008STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
TGF2023-2-05
Qorvo
Qorvo's TGF2023-2-05 is a N-CHANNEL RF Power FET with 17.6 dB Gp for KU BAND applications. Operating in DEPLETION MODE, it has 5A ID and uses GALLIUM NITRIDE technology. This SINGLE configuration transistor is surface mountable and has a RECTANGULAR package shape.
A5G35H110NT4
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
PD20015STR-E
PD20015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
BLF6G27S-45
The NXP Semiconductors BLF6G27S-45 is an RF Power FET with a 65V DS breakdown voltage and 20A drain current. It operates in enhancement mode, suitable for S band applications like amplifiers. The package is ceramic-metal sealed co-fired, flatpack style with dual terminals and a max temperature of 150°C.
MRF7P20040HSR3
NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
PD20015TR-E
PD20015TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 79 W.
934061138112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Terminal Position: DUAL; Terminal Form: FLAT;
LET9002
LET9002 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in enhancing performance while managing up to 4 W power dissipation.
PD84008-E
PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
A2T27S020NR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum Operating Temperature: -40 Cel; Terminal Finish: TIN;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PD54008L-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26.7 W; Terminal Position: QUAD; No. of Terminals: 5;
PD54003-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;
PD54008-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
PD54003
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; JESD-30 Code: R-PDSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD54003-01
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-PQCC-N5; Maximum Drain Current (ID): 4 A; Package Style (Meter): CHIP CARRIER;
PD54003L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; No. of Terminals: 5; Package Style (Meter): CHIP CARRIER;
PD54003L-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.5 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V;
PD54003S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD54003S-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
PD54003STR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; No. of Elements: 1; Transistor Application: AMPLIFIER;
PD54003TR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 25 V;
PD54008
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Additional Features: HIGH RELIABILITY;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
PD54008L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Drain Current (ID): 5 A; No. of Terminals: 5;
PD54008S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE;
PD54008S-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 165 Cel;
PD54008S-E-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Operating Temperature: 165 Cel; No. of Terminals: 2;
PD54008STR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: DUAL;
Supply Digital Components
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