Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
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Assy Fe
RF Power Field Effect Transistors (FET) MRF171A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from New Jersey Semiconductor Products
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
No. of Elements:
Operating Mode:
Polarity or Channel Type:
Transistor Element Material:
MRF171A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-326-2792, 5961013262792
NIIN
013262792
New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
LL4148
Weitron Technology
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
OPA2277UA
Texas Instruments
OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
2N7002
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
SN6505BDBVR
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
LM358MX
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM317T
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LM555CMX
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
MBRS360T3G
Onsemi
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
1N4148
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
STAC2932B
STMicroelectronics
STAC2932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.
BLL6H0514-25,112
Ampleon Netherlands B V
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
SD56120
SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
BLF246,112
NXP Semiconductors
BLF246,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the VERY HIGH FREQUENCY BAND and has a max ID of 13A. Ideal for AMPLIFIER applications, this METAL-OXIDE SEMICONDUCTOR FET is designed for ENHANCEMENT MODE operation in a FLANGE MOUNT package.
PD54008TR-E
PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
CGHV96050F2
Wolfspeed
Wolfspeed's CGHV96050F2 is an N-CHANNEL RF Power FET for X BAND applications. Features include 100V DS Breakdown Voltage, 10dB Power Gain, and 6A Drain Current. Ideal for AMPLIFIER use with HIGH ELECTRON MOBILITY GaN technology, operating from -40°C to 125°C in a FLANGE MOUNT package.
MRF374
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
934061129118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD84010TR-E
PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
MRFE6VP100HSR5
N-CHANNEL; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
BLF647P,112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4; Transistor Application: AMPLIFIER;
PD85006TR-E
STMicroelectronics PD85006TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 36.5W Power Dissipation, ENHANCEMENT MODE operation, and GULL WING terminals for surface mounting.
A2T21H360-24SR6
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
RF5L08350CB4
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934065231118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; Maximum Drain Current (ID): 36 A;
STAC2942FW
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
GS66508T-TR
Gan Systems
GS66508T-TR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at -55 to 150°C. Utilizing GALLIUM NITRIDE technology, it handles up to 30A ID in VERY HIGH FREQUENCY BAND operations.
A2T18H160-24SR3
RD00HHS1-101
Mitsubishi Electric
RD00HHS1-101 by Mitsubishi Electric is a N-CHANNEL RF FET with 30V DS breakdown voltage, suitable for amplifier applications. Operating in enhancement mode, it offers 0.2A max drain current and 3.1W power dissipation at 150°C max temperature. Ideal for high frequency band circuits due to its small outline package style.
TGF2023-2-05
Triquint Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: UPPER; Maximum Drain Current (Abs) (ID): 5 A;
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MRF151G
Motorola
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;
M/a-com Technology Solutions
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 40 A;
Tyco Electronics M/a-com
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Transistor Element Material: SILICON; No. of Elements: 2;
Asi Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;
MRF141G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
New Jersey Semiconductor Products
N-CHANNEL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 32 A;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Power Dissipation Ambient: 500 W; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF136Y
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Terminal Form: FLAT; Transistor Application: AMPLIFIER;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 5 A; No. of Elements: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MRF101AN
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF1513NT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Drain Current (ID): 2 A; JESD-609 Code: e3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Moisture Sensitivity Level (MSL): 3;
MRF136
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRFM-F4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
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