Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
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RF Power Field Effect Transistors (FET) MRF171A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from New Jersey Semiconductor Products
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
No. of Elements:
Operating Mode:
Polarity or Channel Type:
Transistor Element Material:
MRF171A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-326-2792, 5961013262792
NIIN
013262792
New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
AT90CAN128-16AUR
Microchip Technology
AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.
ATMEGA328P-AU
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
MBRA160T3G
Onsemi
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
1552200253
Molex
WIRE AND CABLE;
BAV99
MICRODIODE ELECTRONICS SHENZHEN CO LTD
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
SBAV99LT1G
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
M39029/58-360
Tri-star Electronics International
CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
1N4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
1N4148WS-7-F
Diodes Incorporated
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
934065661112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 33 A; Transistor Element Material: SILICON;
PD55003L-E
STMicroelectronics
STMicroelectronics PD55003L-E is an N-CHANNEL RF FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 2.5A and power dissipation of 14W. The chip carrier package style and matte tin terminal finish make it suitable for high-frequency circuit designs.
SD2933
SD2933 by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 40A Drain Current. It operates in ULTRA HIGH FREQUENCY BAND, suitable for high-power applications like amplifiers and transmitters. The transistor features METAL-OXIDE SEMICONDUCTOR technology and can handle up to 648W power dissipation at 200 °C.
A2T23H200W23SR6
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
CGHV1F025S
Wolfspeed
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CGH40025F
CGH40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C Band applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode at up to 175°C. This single configuration transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
BLF861A
The NXP Semiconductors BLF861A is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a COMMON SOURCE configuration, it has a max Drain Current of 18A and can handle up to 318W power dissipation at 200°C.
A3V07H600-42NR6
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
PTVA101K02EVV1R250XTMA1
Infineon Technologies
Infineon's PTVA101K02EVV1R250XTMA1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage. It features COMMON SOURCE configuration, suitable for AMPLIFIER applications in L BAND frequency range. With METAL-OXIDE SEMICONDUCTOR technology and 225°C max temp, it offers reliable performance in various RF power applications.
PD84006-E
PD84006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 165 °C.
934065606118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Transistor Application: AMPLIFIER;
SD3932
SD3932 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. This versatile transistor supports surface mount configurations and withstands temperatures up to 200 °C.
934065319118
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
CGHV40100F
Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.
FLU35XM
Sumitomo Electric Industries
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 15 V;
CGHV96100F2
CGHV96100F2 by Wolfspeed is an N-CHANNEL RF Power FET with 100V DS Breakdown Voltage, 10.5 dB Power Gain, and operates in DEPLETION MODE. Ideal for X BAND applications like AMPLIFIERS due to its GALLIUM NITRIDE technology and 12A Drain Current capacity.
A3V09H521-24SR6
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MHT1008NT1
NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
A2V09H525-04NR6
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;
MRF171A
Tyco Electronics M/a-com
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;
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MRF151G
Motorola
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;
M/a-com Technology Solutions
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 40 A;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Transistor Element Material: SILICON; No. of Elements: 2;
Asi Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;
MRF141G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
New Jersey Semiconductor Products
N-CHANNEL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 32 A;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Power Dissipation Ambient: 500 W; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF136Y
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Terminal Form: FLAT; Transistor Application: AMPLIFIER;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 5 A; No. of Elements: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MRF101AN
MRF1513NT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Drain Current (ID): 2 A; JESD-609 Code: e3;
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Moisture Sensitivity Level (MSL): 3;
MRF136
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRFM-F4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
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