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BLL6H0514-25,112

NXP Semiconductors

BLL6H0514-25,112 by NXP Semiconductors

NXP Semiconductors' BLL6H0514-25,112 is an N-CHANNEL RF Power FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for L BAND applications, offering 2.5A Drain Current and a max temperature of 150°C. Ideal for AMPLIFIER circuits, it features a METAL-OXIDE SEMICONDUCTOR technology in a FLANGE MOUNT package style.

Median Price

$255.900

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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RFMW

USA . 4 parts In-Stock

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$254.900

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DigiKey

USA . 10 parts In-Stock

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$255.900

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$239.685

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Verical

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$436.072

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Digiode

USA . 146 parts In-Stock

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$242.155

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Nova Conductors

Japan . 10 parts In-Stock

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$247.810

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Vyrian

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Aztec Data Supply Inc.

USA . 1,329 parts In-Stock

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$0.950

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AZTECH Wire

Italy . 703 parts In-Stock

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Semicontronic

India . 31 parts In-Stock

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$216.660

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$211.244

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Corphita

USA . 1,223 parts In-Stock

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Continental Prestige Electronics

USA . 716 parts In-Stock

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$247.810

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$242.854

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Netroflash

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Corohmni

South Africa . 101 parts In-Stock

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Microchip USA

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Ampacity Inc.

Singapore . 31 parts In-Stock

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UNI Independent Distributors

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Argo Parts USA

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Perfect Parts

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Overview

Unleash the power of cutting-edge technology with the NXP Semiconductors BLL6H0514-25,112 RF Power Field Effect Transistor. Crafted with precision and expertise, this single-channel amplifier offers unparalleled performance in the L Band frequency range. Ideal for a wide range of applications, this enhancement mode transistor boasts a high breakdown voltage of 100V and a maximum drain current of 2.5A. Experience seamless connectivity and superior efficiency with this top-of-the-line semiconductor component from NXP Semiconductors. Elevate your project to new heights with the BLL6H0514-25,112.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides durability and reliability, ensuring the product can withstand harsh operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON-resistance and higher electron mobility, making them suitable for high-frequency applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

The surface-mount feature allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this FET can handle higher voltage levels without compromising its performance or reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into different systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers improved efficiency, higher switching speeds, and lower power consumption, making it ideal for RF power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperatures, ensuring stability and reliability in demanding environments.

Technical Specifications

RF Power Field Effect Transistors (FET) BLL6H0514-25,112 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLL6H0514-25,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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