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PD85025S-E

STMicroelectronics

PD85025S-E by STMicroelectronics

PD85025S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

$26.050

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$26.050

100+ parts

-

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870

$26.050

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Digiode

USA . 4,756 parts In-Stock

1+ parts

-

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4,756

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Vyrian

USA . 3,662 parts In-Stock

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3,662

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Anansix

USA . 2,852 parts In-Stock

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-

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2,852

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Chip Stock

USA . 2,700 parts In-Stock

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2,700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,748 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

$0.405

10k+ parts

-

1,748

$0.450

-

$0.405

-

MKK Technologies

India . 416 parts In-Stock

1+ parts

$0.846

100+ parts

-

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416

$0.846

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DigiPath Technology Company

USA . 416 parts In-Stock

1+ parts

$0.846

100+ parts

-

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-

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-

416

$0.846

-

-

-

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.925

100+ parts

$0.842

1k+ parts

$0.758

10k+ parts

-

200

$0.925

$0.842

$0.758

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AZTECH Wire

Italy . 950 parts In-Stock

1+ parts

$19.260

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950

$19.260

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Component Stockers USA

USA . 497 parts In-Stock

1+ parts

$99.990

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497

$99.990

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Corphita

USA . 974 parts In-Stock

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974

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Parana Technologies

USA . 803 parts In-Stock

1+ parts

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100+ parts

$0.538

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803

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$0.538

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Perfect Parts

USA . 448 parts In-Stock

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448

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Overview

Unlock unparalleled performance with the PD85025S-E from STMicroelectronics, a leader in innovation and reliability. This N-channel RF Power FET is designed to elevate your amplification applications, delivering exceptional efficiency and durability even under demanding conditions. With its compact surface mount package and robust power capabilities, it’s perfect for ultra-high frequency applications. Elevate your projects with STMicroelectronics' commitment to quality and cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material offers excellent protection and makes the device lightweight, ideal for compact applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are typically more efficient and provide better performance for high-speed applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces overall component count, enhancing reliability.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this FET ensures high linearity and gain, suitable for audio or RF amplifications.

Surface Mount: YES

Surface mount technology (SMT) allows for automated assembly and saves board space, making it ideal for compact designs.

Minimum DS Breakdown Voltage: 40 V

A robust breakdown voltage ensures reliable operation in high-voltage environments, enhancing device longevity.

Package Shape: RECTANGULAR

The rectangular package design is efficient for space usage on PCBs and allows for easy coupling with heatsinks.

Terminal Form: FLAT

Flat terminals promote better contact and heat dissipation, which enhances performance and reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors typically have higher off-state resistance, minimizing power consumption in inactive states.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Support for ultra high frequencies makes this FET ideal for modern communication technologies like RF and microwave applications.

Maximum Drain Current (Abs) (ID): 7 A

With a maximum drain current of 7 A, this FET offers versatility in handling various load requirements.

No. of Terminals: 2

The simple two-terminal configuration simplifies connections and reduces potential sources of failure.

Maximum Power Dissipation (Abs): 79 W

High power dissipation capability makes this FET suitable for demanding applications, ensuring thermal stability.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for compact designs and is ideal for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology enables fast switching and high efficiency, making this product suitable for high-performance applications.

Maximum Operating Temperature: 165 °C

With resistance to high temperatures, this FET operates reliably in extreme environments, extending its life span.

Transistor Element Material: SILICON

Silicon is a well-established material for FETs, providing good performance and reliability in various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring better long-term reliability.

Maximum Drain Current (ID): 7 A

This specification confirms this device's capability for high current applications, maintaining consistent performance.

Terminal Position: DUAL

Dual terminal positioning allows for flexible integration into different circuit designs, enhancing versatility.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 indicates moderate sensitivity to moisture, guiding handling and storage for optimal performance.

Case Connection: SOURCE

A source terminal connection improves thermal management and reduces overall design complexity in amplifiers.

Technical Specifications

RF Power Field Effect Transistors (FET) PD85025S-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD85025S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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