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ST05250

STMicroelectronics

ST05250 by STMicroelectronics

ST05250 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 90V min DS breakdown voltage, operates in the ultra-high frequency band, and supports a max temp of 200 °C. Ideal for surface mount configurations, it enhances performance in demanding environments.

Median Price

$131.665

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 432 parts In-Stock

1+ parts

$131.470

100+ parts

-

1k+ parts

$118.590

10k+ parts

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432

$131.470

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$118.590

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Verical

USA . 432 parts In-Stock

1+ parts

$131.860

100+ parts

-

1k+ parts

$118.590

10k+ parts

-

432

$131.860

-

$118.590

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,536 parts In-Stock

1+ parts

-

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8,536

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Digiode

USA . 4,520 parts In-Stock

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4,520

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Anansix

USA . 284 parts In-Stock

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284

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 380 parts In-Stock

1+ parts

$1.358

100+ parts

-

1k+ parts

$1.222

10k+ parts

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380

$1.358

-

$1.222

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MKK Technologies

India . 914 parts In-Stock

1+ parts

$2.553

100+ parts

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914

$2.553

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-

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DigiPath Technology Company

USA . 914 parts In-Stock

1+ parts

$2.553

100+ parts

-

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914

$2.553

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AZTECH Wire

Italy . 431 parts In-Stock

1+ parts

$16.760

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431

$16.760

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Microchip USA

USA . 2,692 parts In-Stock

1+ parts

$217.800

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2,692

$217.800

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Parana Technologies

USA . 436 parts In-Stock

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$1.624

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436

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$1.624

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Corphita

USA . 160 parts In-Stock

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160

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Overview

Elevate your projects with the ST05250 from STMicroelectronics, a leader in quality and innovation. This N-channel RF power FET is engineered for exceptional performance in amplifier applications, delivering reliability even in demanding environments. With its ultra-high frequency capabilities and robust design, the ST05250 ensures efficient signal amplification, making it ideal for cutting-edge communications and broadcasting systems. Experience superior value and unmatched durability that only STMicroelectronics can provide!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better electron mobility compared to P-channel varieties, leading to higher efficiency and performance, making this product suitable for high-speed applications.

Configuration: SINGLE

A single configuration simplifies the circuit design, reducing complexity and enhancing reliability in applications where space and efficiency are critical.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for signal processing applications, ensuring high fidelity and performance in audio and RF systems.

Surface Mount: YES

Surface mount technology allows for more compact designs, improving manufacturability and providing flexibility in applications where PCB space is limited.

Minimum DS Breakdown Voltage: 90 V

A high breakdown voltage ensures robustness and reliability under high-voltage conditions, making this FET suitable for demanding applications in RF power circuits.

Package Shape: RECTANGULAR

Rectangular packages enable versatile layout options on PCBs, facilitating efficient use of space and aiding thermal management in high-power applications.

Terminal Form: FLAT

Flat terminals provide better contact and reduce parasitic inductance and resistance, improving overall circuit performance and reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for zero quiescent current and greater efficiency in power management, making it suitable for low-power applications and extending battery life in portable devices.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, this FET is optimized for high-frequency applications such as telecommunications and radar systems, ensuring high-performance signal handling.

No. of Terminals: 4

With four terminals, the design facilitates enhanced circuit configurations and improved performance metrics, enabling versatile application in various electronic devices.

Package Style (Meter): FLANGE MOUNT

Flange mount design enhances mechanical stability and heat dissipation, making this product a strong choice for high-power applications and prolonged operational use.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology allows for high input impedance and low power consumption, making this FET efficient for a wide range of applications in communication and electronics.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature ensures reliability and longevity in extreme conditions, making this transistor suitable for rigorous operational environments.

Transistor Element Material: SILICON

Silicon provides excellent thermal stability and performance, making this FET a reliable choice across various applications requiring durability and efficiency.

Terminal Position: DUAL

Dual terminal positions facilitate better thermal management and provide flexibility for circuit design, improving performance in high-power applications.

Case Connection: SOURCE

Source case connection enhances thermal performance and simplifies the layout, which is particularly beneficial for minimizing heat accumulation in high-power applications.

Maximum Feedback Capacitance (Crss): 40 pF

Low feedback capacitance minimizes signal distortion and improves frequency response, providing a clearer signal in RF applications and enhancing overall performance.

Technical Specifications

RF Power Field Effect Transistors (FET) ST05250 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

90 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-XDFM-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

ST05250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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