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PD60030

STMicroelectronics

PD60030 by STMicroelectronics

PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,352 parts In-Stock

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2,352

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Anansix

USA . 1,071 parts In-Stock

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1,071

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Digiode

USA . 215 parts In-Stock

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215

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,544 parts In-Stock

1+ parts

$1.707

100+ parts

-

1k+ parts

$1.536

10k+ parts

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1,544

$1.707

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$1.536

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MKK Technologies

India . 209 parts In-Stock

1+ parts

$3.209

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209

$3.209

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DigiPath Technology Company

USA . 209 parts In-Stock

1+ parts

$3.209

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209

$3.209

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Parana Technologies

USA . 722 parts In-Stock

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$2.040

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722

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$2.040

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Corphita

USA . 291 parts In-Stock

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291

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Overview

Unlock exceptional performance with the PD60030 from STMicroelectronics, a leader in innovative semiconductor solutions. This N-channel RF Power FET excels in amplifier applications, delivering reliable operation in the demanding L-band frequency range. With its robust design and surface-mount convenience, you’ll experience enhanced efficiency and thermal stability. Choose the PD60030 for unparalleled quality, ensuring your projects meet the highest standards while maximizing value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material protects the transistor while also being cost-effective.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher performance compared to P-channel types, making this transistor suitable for efficient amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to incorporate into various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount technology enables compact PCB design and better performance by reducing parasitic effects.

Minimum DS Breakdown Voltage: 65 V

A minimum breakdown voltage of 65V provides flexibility in handling various signal voltages and enhances reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on circuit boards, facilitating dense layouts.

Terminal Form: GULL WING

Gull wing terminals offer excellent solderability and mechanical stability, ensuring a robust connection on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control of the device, contributing to high-efficiency amplification.

Highest Frequency Band: L BAND

Operating in the L band makes this FET suitable for various communication and broadcasting applications.

No. of Terminals: 2

A simple two-terminal design reduces complexity and is ideal for basic amplifier circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes footprint on PCBs, promoting space efficiency and easier integration.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology contributes to low power consumption, high input impedance, and improved thermal stability.

Maximum Operating Temperature: 165 °C

A high maximum operating temperature ensures reliability in demanding environments and extended operational life.

Transistor Element Material: SILICON

Silicon as the elemental material provides excellent reliability and performance characteristics in FET applications.

Terminal Position: DUAL

Dual terminal positioning allows for versatile placement on the PCB, facilitating better routing and design flexibility.

Technical Specifications

RF Power Field Effect Transistors (FET) PD60030 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD60030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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