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MRF8P20140WHSR5

Freescale Semiconductor

MRF8P20140WHSR5 by Freescale Semiconductor

MRF8P20140WHSR5 by Freescale is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, has 2 elements, and a max temp of 125°C. Commonly used as an amplifier in surface mount applications due to its ceramic-metal package body material.

Median Price

$108.135

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$96.120

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$80.940

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Verical

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$107.500

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$101.175

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One Stop Electronics

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$91.010

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Overview

Elevate your RF power applications with the MRF8P20140WHSR5 by Freescale Semiconductor. Crafted with precision and expertise, this RF Power FET boasts unparalleled quality and reliability. Ideal for amplifier applications in the S band, this FET offers customers superior performance and value. With a breakthrough design and cutting-edge technology, this product is a game-changer in the field of RF power transistors. Experience the difference with Freescale Semiconductor's MRF8P20140WHSR5.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and heat resistance, making the transistor suitable for high temperature applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics compared to P-channel transistors, making this a good choice for high-frequency applications.

Configuration: COMMON SOURCE, 2 ELEMENTS

Common source configuration allows for easy impedance matching, and having 2 elements increases power handling capability.

Transistor Application: AMPLIFIER

Designed specifically for amplification, ensuring optimal performance in signal boosting applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards.

Minimum DS Breakdown Voltage: 65 V

With a high breakdown voltage, this transistor can handle high power levels without failure.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and soldering on a circuit board.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers high efficiency and low power consumption, making the transistor suitable for power-sensitive applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand high temperatures without performance degradation.

Technical Specifications

RF Power Field Effect Transistors (FET) MRF8P20140WHSR5 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF8P20140WHSR5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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