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FLU35XM

Eudyna Devices

FLU35XM by Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: DEPLETION MODE; No. of Terminals: 4;

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Nova Conductors

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South Africa . 630 parts In-Stock

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AZTECH Wire

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Technical Specifications

RF Power Field Effect Transistors (FET) FLU35XM attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Eudyna Devices

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CQMW-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

FLU35XM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Eudyna Devices

Located in San Jose, California, for more than twenty years, Eudyna Devices USA Inc., formerly Fujitsu Compound Semiconductor, Inc. has been a pioneer in the development of devices for fiber-optic communication systems. All shares of Eudyna Devices Inc. owned by Fujitsu (29,680,000 shares) will be acquired by Sumitomo Electric.19 Dec 2008 Sumitomo Electric The company was founded in 1897 to produce copper wire for electrical uses. Sumitomo Electric operates in five business fields: Automotive, Information & Communications, Electronics, Environment & Energy, and Industrial materials and is developing in two others: Life Sciences and Materials & Resources.

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