Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
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RF Power Field Effect Transistors (FET) MRF8S21200HSR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor
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MRF8S21200HSR6 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
PCN Obsolescence/ EOL - Mult Dev EOL 9/Jun/2017
PCN Packaging - All Dev Label Update 15/Dec/2020
On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Rugao Dachang Electronic
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148WT
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
General Diode
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMBJ18CA
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Yangzhou Yangjie Electronics
1N4148WS-7-F
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
1N5819HW-7-F
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
Shenzhen Socay Electronics
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
Taitron Components
ST50V10100
STMicroelectronics
RF Power Field-Effect Transistors;
CG2H40025F
Wolfspeed
CG2H40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 13dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 150 °C with a max ID of 3A and Crss of 0.4pF.
A3G23H500W17SR3
NXP Semiconductors
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
RF2L42008CG2
MRF1517NT1
NXP Semiconductors' MRF1517NT1 is a single N-channel RF Power FET with 25V DS breakdown voltage and 4A max drain current. Ideal for amplifier applications in the UHF band, it operates in enhancement mode with a max power dissipation of 62.5W.
STAC2932FW
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934056582112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2;
PD85025STR-E
PD85025STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
934061788112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F4;
A2T21H410-24SR6
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF9180
Motorola
MRF9180 by Motorola is an N-CHANNEL RF Power FET with 2 elements, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE up to 200 °C, with a max power dissipation of 388 W.
SD60030
SD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L-band frequencies. This surface-mount transistor ensures high performance up to 200 °C.
934061129118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
TGF4230-EPU
Texas Instruments
TGF4230-EPU by Texas Instruments is an N-CHANNEL RF Power FET for X BAND applications. Features HETERO-JUNCTION tech with GALLIUM ARSENIDE material. Surface mount, 4 terminals, RECTANGULAR package ideal for high-frequency circuit designs.
A2T23H160-24SR3
STAC1011-500
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FLC107WG
Fujitsu Semiconductor America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 15 V; Case Connection: SOURCE; Terminal Form: FLAT;
934061174112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
LET9045TR
LET9045TR by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates at up to 165 °C. Its compact surface mount design ensures efficient performance in various electronic devices.
STAP1011-180
STAP1011-180 by STMicroelectronics is an N-channel RF power FET designed for high-frequency applications in the L band. It features a max power dissipation of 800 W, a breakdown voltage of 65 V, and operates at temperatures up to 165 °C. Ideal for enhancing performance in various electronic devices.
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MRF8HP21130HSR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): 40; JESD-30 Code: R-CDFP-F4;
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F4;
MRF8P20165WHSR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF8S21200HSR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
MRF8P29300HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4;
MRF8P20140WHSR5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; JESD-30 Code: R-CDFP-F4;
MRF8S9200NR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Additional Features: ESD PROTECTED; JESD-30 Code: R-CDFP-F2;
MRF8P20161HSR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Operating Temperature: 225 Cel; Maximum Time At Peak Reflow Temperature (s): 40; JESD-30 Code: R-CDFP-F4;
MRF8P20160HSR3
NXP's MRF8P20160HSR3 is an N-CHANNEL RF FET with 65V DS breakdown voltage, suitable for L BAND applications. It features separate configuration, flatpack package style, and operates in enhancement mode up to 225°C. Ideal for amplifier circuits requiring high-frequency performance.
MRF8P20100HR3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Highest Frequency Band: S BAND; Qualification: Not Qualified;
MRF8P20165WHR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; No. of Elements: 2; Transistor Element Material: SILICON;
MRF8P20100HSR3
NXP's MRF8P20100HSR3 is an N-CHANNEL RF FET with 65V DS Breakdown Voltage, suitable for S BAND applications. It features a CERAMIC, METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE. This transistor has 2 elements, flat terminals, and can withstand temperatures up to 225°C.
MRF8P20165WHSR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
MRF8HP21080HSR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Package Shape: RECTANGULAR;
MRF8P20100HSR3,128
MRF8P20140WGHSR3
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Operating Temperature: 125 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF8P20140WHR3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;
MRF8S21200HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; No. of Elements: 2;
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