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DE375-501N21A

IXYS Corporation

DE375-501N21A by IXYS Corporation

DE375-501N21A by IXYS Corp is a plastic/epoxy N-channel RF Power FET with 500V DS breakdown voltage. It operates in the very high-frequency band and has a max drain current of 25A. Ideal for switching applications.

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Vyrian

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Nova Conductors

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Advanced Electronics

New Zealand . 870 parts In-Stock

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Corohmni

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AZTECH Wire

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Semicontronic

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Ampacity Inc.

Singapore . 257 parts In-Stock

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Continental Prestige Electronics

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Overview

Experience the power and versatility of the DE375-501N21A by IXYS Corporation. As a leading manufacturer in RF Power Field Effect Transistors, IXYS delivers superior quality and reliability. This single-channel N-CHANNEL transistor is perfect for switching applications, offering high performance and efficiency. With a minimum DS breakdown voltage of 500V and maximum drain current of 25A, this enhancement mode transistor operates flawlessly even in the most demanding conditions. Whether you're in the automotive, industrial, or communication industry, the DE375-501N21A provides exceptional value, benefits, and advantages that will take your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides a lightweight and cost-effective solution.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and lower resistance compared to P-channel transistors, making them efficient for switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient PCB assembly.

Minimum DS Breakdown Voltage: 500 V

The high breakdown voltage ensures efficient power handling capabilities.

Package Shape: RECTANGULAR

Rectangular shape provides for a compact design and easy mounting on a PCB.

Terminal Form: FLAT

Flat terminals make it convenient for soldering and connection in circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better control over the transistor's switching characteristics.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for use in high-frequency applications where fast switching times are required.

No. of Terminals: 6

Having 6 terminals allows for more flexibility in the circuit connections and functionalities.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and makes it suitable for compact electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and performance in the transistor operation.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without degrading performance, ensuring reliability in various environments.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and electrical properties, enhancing the transistor's overall performance.

Maximum Drain Current (ID): 25 A

High maximum drain current allows for handling higher power levels in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connections.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures stable operation in the circuit.

Technical Specifications

RF Power Field Effect Transistors (FET) DE375-501N21A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DE375-501N21A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

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