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TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,547 parts In-Stock

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4,547

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Digiode

USA . 3,819 parts In-Stock

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3,819

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Lighthouse Electronics, Inc.

USA . 629 parts In-Stock

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629

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,268 parts In-Stock

1+ parts

$0.821

100+ parts

-

1k+ parts

$1.791

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1,268

$0.821

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$1.791

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DigiPath Technology Company

USA . 1,090 parts In-Stock

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$0.904

100+ parts

$0.831

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1,090

$0.904

$0.831

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ChromeModa Solutions

Germany . 4,517 parts In-Stock

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$0.922

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$0.756

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4,517

$0.922

$0.756

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IDEA Electronic Components Group

UK . 716 parts In-Stock

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$0.922

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$0.830

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716

$0.922

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$0.830

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One Stop Electronics

USA . 921 parts In-Stock

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$17.050

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921

$17.050

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AZTECH Wire

Italy . 509 parts In-Stock

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$18.686

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509

$18.686

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Corphita

USA . 825 parts In-Stock

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825

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Overview

Unlock the power of RF amplification with the TRF7003PK by Texas Instruments. As a leader in semiconductor technology, Texas Instruments delivers unparalleled quality and reliability in every product. The TRF7003PK is perfect for a wide range of applications in the ultra-high frequency band, offering customers enhanced performance and efficiency. With its N-channel configuration and single package design, this RF Power FET provides value and benefits that meet the needs of even the most demanding projects. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, making this product a good choice for high-performance applications.

Configuration: SINGLE

Simplified design and ease of use in circuits that require a single transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, facilitating efficient manufacturing processes.

Minimum DS Breakdown Voltage: 15 V

Provides a high breakdown voltage, ensuring reliable operation in high-voltage applications.

Package Shape: RECTANGULAR

Compact and space-efficient design for integration into various electronic devices.

Terminal Form: FLAT

Facilitates easy soldering and connection to other components in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low on-state resistance, leading to better performance in the circuit.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications that require operation in the ultra-high frequency range, offering excellent signal processing capability.

Maximum Drain Current (Abs) (ID): 2 A

High drain current capacity allows for handling larger currents within the circuit, making it versatile for various applications.

No. of Terminals: 3

Simplified three-terminal connection for easy integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package style suitable for modern electronic devices with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability with low power consumption, making it energy-efficient in operation.

Maximum Operating Temperature: 85 °C

Capable of operating efficiently at high temperatures, ensuring stability and reliability in adverse environmental conditions.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and compatibility with modern semiconductor technologies.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures correct orientation during assembly.

Technical Specifications

RF Power Field Effect Transistors (FET) TRF7003PK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TRF7003PK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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