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TRF7000PK

Texas Instruments

TRF7000PK by Texas Instruments

TRF7000PK by Texas Instruments is a single N-channel RF Power FET with 15V DS breakdown voltage and 6A drain current. Ideal for L Band applications, it operates in depletion mode with a max power dissipation of 4W at 175°C ambient temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,415 parts In-Stock

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Digiode

USA . 1,833 parts In-Stock

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1,833

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Distributors (Availability)

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Parana Technologies

USA . 2,200 parts In-Stock

1+ parts

$1.367

100+ parts

-

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$2.089

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2,200

$1.367

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$2.089

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DigiPath Technology Company

USA . 87 parts In-Stock

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$1.505

100+ parts

$1.385

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87

$1.505

$1.385

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ChromeModa Solutions

Germany . 3,567 parts In-Stock

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$1.536

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$1.260

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3,567

$1.536

$1.260

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IDEA Electronic Components Group

UK . 1,112 parts In-Stock

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$1.536

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$1.382

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1,112

$1.536

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$1.382

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AZTECH Wire

Italy . 867 parts In-Stock

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$7.386

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867

$7.386

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One Stop Electronics

USA . 433 parts In-Stock

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$11.050

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433

$11.050

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Ampacity Inc.

Singapore . 282 parts In-Stock

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$16.050

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282

$16.050

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Semicontronic

India . 820 parts In-Stock

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$45.050

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$43.924

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$43.698

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820

$45.050

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$43.698

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Corphita

USA . 2,365 parts In-Stock

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Corohmni

South Africa . 208 parts In-Stock

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Overview

Unlock the full potential of your RF power applications with the TRF7000PK by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and performance with every product. The TRF7000PK, a high-quality RF Power Field Effect Transistor, offers unmatched value and benefits for customers seeking reliable and efficient solutions. Whether you're working in the L Band frequency range or looking for a dependable depletion-mode transistor, this product has you covered. Trust Texas Instruments to deliver cutting-edge technology and superior performance for all your RF power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and high conductivity, resulting in better performance.

Configuration: SINGLE

Simplified design and easy integration into various electronic systems.

Surface Mount: YES

Facilitates easy installation and space-saving in compact electronic devices.

Minimum DS Breakdown Voltage: 15 V

Provides a high level of protection against voltage spikes, ensuring the longevity of the transistor.

Package Shape: RECTANGULAR

Optimal form factor for fitting into circuit layouts efficiently.

Terminal Form: FLAT

Allows for secure and stable connections during installation.

Operating Mode: DEPLETION MODE

Enables precise control over the flow of current in the transistor, improving efficiency.

Highest Frequency Band: L BAND

Ideal for applications that require high-frequency operation, such as communication systems.

Maximum Drain Current (Abs) (ID): 6 A

Capable of handling high current loads without overheating or malfunctioning.

No. of Terminals: 3

Simplified interface with other electronic components, reducing the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Field Effect Transistor Technology: METAL SEMICONDUCTOR

Offers high switching speeds and low power consumption, making it suitable for a wide range of applications.

Maximum Power Dissipation Ambient: 4 W

Efficient heat dissipation capability, allowing for continuous operation without overheating.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures, making it suitable for industrial and automotive applications.

Transistor Element Material: GALLIUM ARSENIDE

Provides high electron mobility and low noise characteristics, enhancing overall performance.

Maximum Drain Current (ID): 6 A

Can handle high current loads reliably, ensuring stable operation under varying conditions.

Terminal Position: SINGLE

Simplified wiring configuration for ease of installation and maintenance.

Technical Specifications

RF Power Field Effect Transistors (FET) TRF7000PK attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

4 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TRF7000PK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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