Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
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$1,012.500
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Verical
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$625.000
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10k+ parts
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$1,400.000
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$593.750
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RF Power Field Effect Transistors (FET) MRF300A-27MHZ attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
Peak Reflow Temperature (C):
Maximum Time At Peak Reflow Temperature (s):
MRF300A-27MHZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
LAN8720AI-CP-TR
Microchip Technology
LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
SS14
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
DS18B20
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
BAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Good-ark Electronics
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
CGH40025P
Wolfspeed
CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.
MMRF5014HR5
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 17 dB; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
D1008UK
Tt Electronics Plc
D1008UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max temp of 200°C and comes in a RECTANGULAR package with FLANGE MOUNT style.
A5G35S004NT6
NXP Semiconductors
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
PD54008S-E-E
STMicroelectronics
PD54008S-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
ST05250
ST05250 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 90V min DS breakdown voltage, operates in the ultra-high frequency band, and supports a max temp of 200 °C. Ideal for surface mount configurations, it enhances performance in demanding environments.
BLF147
The NXP Semiconductors BLF147 is a single N-channel RF Power FET with a very high frequency band. It has a max drain current of 25A, operating in enhancement mode for amplifier applications. With a package style of flange mount and ceramic-metal-sealed co-fired body material, it offers a max power dissipation of 220W at 200°C ambient temperature.
934064592112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
AFT09S200W02NR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;
SD57060-01
SD57060-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.
934065468112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 2; Minimum DS Breakdown Voltage: 104 V;
PD57006-E
PD57006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 150 °C.
A5G07H800W19NR3
RF Power Field-Effect Transistors;
PD57060STR-E
PD57060STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance in demanding environments.
A3T18H455W23SR6
NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.
BLF278
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; No. of Elements: 1;
MRF181ZR1
MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
934056498112
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;
PD85015STR-E
PD85015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
AFT26H250-24SR6
N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;
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MRF300AN
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF300AN-81MHZ
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF300AN-230MHZ
MRF300BN
MRF300AN-144MHZ
MRF300AN-13MHZ
MRF300AN-50MHZ
MRF374
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER; Minimum Power Gain (Gp): 12.5 dB;
New Jersey Semiconductor Products
N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Elements: 2;
MRF372R3
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): 40;
MRF374A
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 302 W; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F4;
MRF372R5
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; No. of Elements: 2; Transistor Application: AMPLIFIER;
MRF373ALR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 197 W; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT;
MRF373ALSR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 278 W; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
MRF300A-40MHZ
MRF373R1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 173 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
MRF373SR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 173 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 7 A;
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