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SD56120

STMicroelectronics

SD56120 by STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,476 parts In-Stock

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5,476

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Digiode

USA . 4,609 parts In-Stock

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4,609

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Anansix

USA . 1,873 parts In-Stock

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1,873

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,129 parts In-Stock

1+ parts

$1.345

100+ parts

-

1k+ parts

$1.211

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1,129

$1.345

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$1.211

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MKK Technologies

India . 795 parts In-Stock

1+ parts

$2.529

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795

$2.529

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DigiPath Technology Company

USA . 795 parts In-Stock

1+ parts

$2.529

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795

$2.529

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AZTECH Wire

Italy . 804 parts In-Stock

1+ parts

$12.900

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804

$12.900

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 3,575 parts In-Stock

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3,575

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Parana Technologies

USA . 2,059 parts In-Stock

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$1.608

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2,059

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$1.608

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Perfect Parts

USA . 122 parts In-Stock

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122

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Overview

Unlock unparalleled RF performance with the SD56120 from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality N-channel FET delivers exceptional amplification in ultra-high frequency applications, ensuring reliable power and efficiency for your projects. Its robust design and superior thermal management provide peace of mind, making it ideal for demanding environments. Elevate your designs with the SD56120—where quality meets cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making the product reliable for various applications.

Polarity or Channel Type: N-CHANNEL

As an N-channel FET, it provides enhanced efficiency and higher switching speeds, making it suitable for amplifier applications.

Configuration: COMMON SOURCE, 2 ELEMENTS

The common source configuration allows for high voltage gain, ideal for amplifying weak signals.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this product is optimized for audio and RF applications, ensuring superior performance.

Surface Mount: YES

Surface mount capability leads to reduced size and weight, facilitating more compact circuit designs.

Minimum DS Breakdown Voltage: 65 V

With a minimum breakdown voltage of 65V, this FET is suitable for applications that require handling higher voltages.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient PCB space utilization, making it easier to design circuits.

Terminal Form: FLAT

Flat terminals ensure good thermal performance and ease of soldering, enhancing the reliability of connections.

Operating Mode: ENHANCEMENT MODE

As an enhancement mode FET, it provides excellent control over current flow, allowing for better signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operational in the ultra high frequency band, this product caters to modern communication systems, making it versatile for advanced applications.

No. of Elements: 2

Having two elements allows for greater amplification capabilities and improved overall performance in RF applications.

Maximum Drain Current (Abs) (ID): 14 A

With a maximum drain current of 14A, this FET can handle significant loads, making it suitable for high power applications.

No. of Terminals: 4

The four terminals facilitate various configurations and more flexibility in circuit design.

Maximum Power Dissipation (Abs): 217 W

A maximum power dissipation of 217W ensures that the product can manage substantial power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging allows for secure installation and improves thermal management, enhancing the reliability of the device in physically demanding environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The MOS technology used in this FET contributes to low ON resistance and high efficiency, making it suitable for high-frequency applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this FET is designed to perform in demanding thermal conditions, broadening its application range.

Transistor Element Material: SILICON

Silicon as the base material offers excellent electrical properties, making this FET reliable and efficient in signal amplification.

Maximum Drain Current (ID): 14 A

Reiterating the maximum drain current capability ensures emphasis on its ability to support demanding load conditions.

Terminal Position: DUAL

Dual terminal positioning allows for more flexible circuit design and layout, aiding in compact assembly.

Case Connection: SOURCE

Connection to the source enhances stability and efficiency in circuit operation, ensuring optimal performance.

Technical Specifications

RF Power Field Effect Transistors (FET) SD56120 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

14 A

Maximum Drain Current (ID):

14 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD56120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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