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RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

RF Power Field Effect Transistors (FET)

Available Parts 299

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
A3G20S350-01SR3 by NXP Semiconductors

A3G20S350-01SR3

NXP Semiconductors

NXP Semiconductors A3G20S350-01SR3 is an N-CHANNEL RF FET with 125V DS Breakdown Voltage, 17dB Power Gain, and GaN Element. Ideal for S Band applications, this DEPLETION MODE transistor operates from -55°C to 225°C in AMPLIFIER circuits.

SINGLE

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CDFP-F2

1

2

DEPLETION MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

17 dB

YES

FLAT

DUAL

40

AMPLIFIER

GALLIUM NITRIDE

A3G18D510-04SR3 by NXP Semiconductors

A3G18D510-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;

SEPARATE, 2 ELEMENTS

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CDFP-F4

2

4

DEPLETION MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

15 dB

YES

FLAT

DUAL

40

AMPLIFIER

GALLIUM NITRIDE

A3G26H350W17SR3 by NXP Semiconductors

A3G26H350W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

12 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

A3G26H502W17SR3 by NXP Semiconductors

A3G26H502W17SR3

NXP Semiconductors

NXP Semiconductors A3G26H502W17SR3 is an N-CHANNEL RF FET with 150V DS breakdown voltage, 11.3 dB power gain, and GaN element material. Primarily used in S Band applications as a depletion mode amplifier with flatpack package style for surface mount assembly.

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

11.3 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

A3V26S004NT6 by NXP Semiconductors

A3V26S004NT6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;

SOURCE

SINGLE

105 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDSO-N6

3

1

6

ENHANCEMENT MODE

225 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

19.5 dB

YES

NO LEAD

DUAL

40

AMPLIFIER

SILICON

MMRF1050HR6 by NXP Semiconductors

MMRF1050HR6

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;

SOURCE

SEPARATE, 2 ELEMENTS

105 V

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

225 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

19 dB

YES

FLAT

DUAL

40

AMPLIFIER

SILICON

A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

150 V

JUNCTION

S BAND

R-CQFP-F6

2

6

DEPLETION MODE

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

13.3 dB

YES

FLAT

QUAD

40

AMPLIFIER

GALLIUM NITRIDE

BLC9H10XS-350AY by Ampleon Netherlands B V

BLC9H10XS-350AY

Ampleon Netherlands B V

BLC9H10XS-350AY by Ampleon is an N-channel RF Power FET with a min DS Breakdown Voltage of 108V and a Min Power Gain of 17dB. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a Metal-Oxide Semiconductor technology and can withstand temperatures from -40 to 125°C.

SOURCE

COMMON SOURCE, 2 ELEMENTS

108 V

.3 ohm

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDFP-F4

2

4

ENHANCEMENT MODE

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLATPACK

N-CHANNEL

17 dB

IEC-60134

YES

FLAT

DUAL

AMPLIFIER

SILICON

ART700FHU by Ampleon Netherlands B V

ART700FHU

Ampleon Netherlands B V

ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.

SOURCE

COMMON SOURCE, 2 ELEMENTS

177 V

METAL-OXIDE SEMICONDUCTOR

1.04 pF

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

225 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

26.8 dB

IEC-60134

YES

FLAT

DUAL

AMPLIFIER

SILICON

A5G23H065NT4 by NXP Semiconductors

A5G23H065NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE; Maximum Operating Temperature: 150 Cel;

SOURCE

SEPARATE, 2 ELEMENTS

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDSO-N6

3

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

14 dB

YES

NO LEAD

DUAL

40

AMPLIFIER

GALLIUM NITRIDE

A5G37H110NT4 by NXP Semiconductors

A5G37H110NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;

SOURCE

SEPARATE, 2 ELEMENTS

125 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-PDSO-N6

3

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

12 dB

YES

NO LEAD

DUAL

40

AMPLIFIER

GALLIUM NITRIDE