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BLC9H10XS-350AY

Ampleon Netherlands B V

BLC9H10XS-350AY by Ampleon Netherlands B V

BLC9H10XS-350AY by Ampleon is an N-channel RF Power FET with a min DS Breakdown Voltage of 108V and a Min Power Gain of 17dB. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a Metal-Oxide Semiconductor technology and can withstand temperatures from -40 to 125°C.

Median Price

$65.710

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Overview

Ampleon Netherlands B V presents the BLC9H10XS-350AY, a top-of-the-line RF Power Field Effect Transistor designed for high performance and reliability. With its N-CHANNEL configuration and COMMON SOURCE design, this transistor is perfect for amplifier applications in the Ultra High Frequency Band. The BLC9H10XS-350AY offers customers unparalleled power gain of 17 dB and a minimum DS breakdown voltage of 108 V, ensuring optimal functionality in any operating environment. Trust Ampleon's expertise and invest in the superior quality of the BLC9H10XS-350AY for all your RF power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient power handling capabilities, ideal for amplifier circuits.

Configuration: COMMON SOURCE, 2 ELEMENTS

Allows for improved power gain and performance in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high-quality signal processing.

Surface Mount: YES

Enables easy integration onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 108 V

Provides a high voltage threshold, protecting the transistor from damage in high-power environments.

Minimum Power Gain (Gp): 17 dB

Ensures strong signal amplification, resulting in clear and accurate output signals.

Package Shape: RECTANGULAR

Offers a compact design for efficient use of space in circuit layouts.

Terminal Form: FLAT

Facilitates secure connections and soldering during assembly, improving overall reliability.

Operating Mode: ENHANCEMENT MODE

Allows for enhanced control over the transistor's conductivity, optimizing performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Supports high-frequency operations, suitable for demanding RF applications.

No. of Elements: 2

Incorporates multiple elements for enhanced functionality and performance capabilities.

No. of Terminals: 4

Provides multiple connection points for versatile circuit configurations.

Package Style (Meter): FLATPACK

Offers a standardized packaging format for easy compatibility with various systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced technology for efficient power handling and reliability.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring stable performance in demanding environments.

Transistor Element Material: SILICON

Utilizes high-quality silicon material for reliable and consistent transistor operation.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature environments without compromising performance.

Maximum Drain-Source On Resistance: 0.3 ohm

Provides low resistance for efficient power transfer and signal processing.

Terminal Position: DUAL

Offers dual terminal placement for flexibility in circuit design and layout.

Case Connection: SOURCE

Features a source connection for simplified circuit connections and configurations.

Reference Standard: IEC-60134

Meets industry standards for quality and performance, ensuring reliable operation.

Technical Specifications

RF Power Field Effect Transistors (FET) BLC9H10XS-350AY attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

108 V

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFP-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

Minimum Power Gain (Gp):

17 dB

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLC9H10XS-350AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ampleon Netherlands B V

The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.

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