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BAP65-02,135

NXP Semiconductors

BAP65-02,135 by NXP Semiconductors

BAP65-02,135 by NXP Semiconductors is a surface mount PIN diode with a max operating temp of 150 °C and a reverse test voltage of 0V. It features low forward resistance (0.95Ω) and nominal capacitance (0.65pF). Ideal for RF applications, it ensures efficient signal processing.

Median Price

$0.430

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,824 parts In-Stock

1+ parts

$0.430

100+ parts

$0.153

1k+ parts

$0.113

10k+ parts

$0.081

6,824

$0.430

$0.153

$0.113

$0.081

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,165 parts In-Stock

1+ parts

$0.408

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-

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2,165

$0.408

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Vyrian

USA . 550 parts In-Stock

1+ parts

$0.430

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550

$0.430

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Anansix

USA . 1,370 parts In-Stock

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1,370

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,543 parts In-Stock

1+ parts

$0.387

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2,543

$0.387

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Microchip USA

USA . 13,172 parts In-Stock

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$0.526

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13,172

$0.526

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Native Components

USA . 77 parts In-Stock

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$13.920

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77

$13.920

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Northwest PG Solutions

USA . 277 parts In-Stock

1+ parts

$15.312

100+ parts

$13.781

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277

$15.312

$13.781

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UNI Independent Distributors

Spain . 7,997 parts In-Stock

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7,997

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Overview

Elevate your designs with the BAP65-02,135 PIN Diode from NXP Semiconductors, a trusted leader in innovation. This high-quality component ensures reliability and efficiency, ideal for RF switching, attenuation, and photodetection applications. With exceptional thermal performance and a compact surface-mount design, it seamlessly integrates into your projects, delivering unmatched value and reliability. Experience superior performance that boosts your product's capabilities!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for compact assembly and efficient use of board space, making it ideal for modern electronic designs.

Reverse Test Voltage: 0 V

Having a reverse test voltage of 0 V indicates a low leakage characteristic, which contributes to the reliability and performance of the diode.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high thermal environments, enhancing its applicability in demanding applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring stable performance over time.

Maximum Diode Forward Resistance: 0.95 ohm

A low forward resistance of 0.95 ohms minimizes power loss when current flows through the diode, contributing to energy efficiency in circuit designs.

Nominal Diode Capacitance: 0.65 pF

With a very low nominal diode capacitance of 0.65 pF, this product minimizes signal distortion, making it suitable for high-frequency applications.

Nominal Minority Carrier Lifetime: 0.17 μs

A nominal minority carrier lifetime of 0.17 microseconds indicates quick response to changing signals, allowing for effective operation in RF applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V provides a robust safety margin, ensuring the diode is reliable under varied voltage conditions.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum time of 30 seconds at peak reflow temperature indicates the diode's ability to withstand soldering processes without compromising integrity.

Peak Reflow Temperature: 260 °C

The ability to tolerate a peak reflow temperature of 260 °C makes this product compatible with lead-free soldering processes, supporting modern manufacturing practices.

Diode Resistive Test Frequency: 100 MHz

Rated for a resistive test frequency of 100 MHz, this diode is suitable for high-speed applications, ensuring effective operation in communications systems.

Diode Resistive Test Current: 5 mA

Operating at a resistive test current of 5 mA allows for accurate performance assessment under low power conditions, demonstrating its versatility.

Diode Type: PIN DIODE

As a PIN diode, it combines the benefits of both p-n junctions and intrinsic layers, making it ideal for RF switching and attenuation applications.

Technical Specifications

PIN Diodes BAP65-02,135 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

30 V

Nominal Diode Capacitance:

.65 pF

Maximum Diode Forward Resistance:

.95 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.17 us

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP65-02,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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