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MMBV3700LT1

Onsemi

MMBV3700LT1 by Onsemi

MMBV3700LT1 by Onsemi is a PIN diode with a reverse test voltage of 20V and max power dissipation of 0.2W. It operates in the very high-frequency band for switching applications, featuring a small outline package style and gull wing terminal form. With a breakdown voltage of 200V, it is suitable for high-speed electronic circuits.

Median Price

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Lifecycle Status

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8

In-Stock Inventory

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Classic Components Corporation

USA . 191,073 parts In-Stock

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IBS Electronics

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Vyrian

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Digiode

USA . 1,637 parts In-Stock

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Electronics Depot

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Semi Source

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Electronic Expediters

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LittleDiode

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QUARKTWIN TECHNOLOGY LTD

USA . 21,092 parts In-Stock

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SupplyDigital Components

Austria . 6,687 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 3,562 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 2,000 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 237 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Corohmni

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Overview

Discover the exceptional quality and performance of the MMBV3700LT1 PIN Diode by Onsemi, a leading manufacturer known for its innovative technology. This versatile diode is designed for very high-frequency applications, offering reliable switching capabilities and a compact small outline package. With a reverse test voltage of 20V and a maximum power dissipation of 0.2W, this diode ensures efficient operation in a wide range of electronic devices. Trust Onsemi's expertise and experience to deliver superior products that meet your needs for speed, precision, and durability. Elevate your designs with the MMBV3700LT1 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode and enhances durability for long-term use.

Frequency Band: VERY HIGH FREQUENCY

Suitable for applications requiring high frequency performance.

Surface Mount: YES

Allows for easy and efficient PCB mounting.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures minimal interference and distortion in signal processing.

Reverse Test Voltage: 20 V

Adequate voltage rating for reliable reverse operation.

Application: SWITCHING

Optimized for switching applications, offering high performance in switching operations.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Power Dissipation: 0.2 W

Can handle moderate power levels without compromising performance.

Maximum Diode Forward Resistance: 1 ohm

Low forward resistance for efficient signal transmission.

Diode Type: PIN DIODE

Pin diodes are known for their fast switching speeds and low distortion characteristics.

Technical Specifications

PIN Diodes MMBV3700LT1 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

HIGH VOLTAGE

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Nominal Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Reverse Test Voltage:

20 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBV3700LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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