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MMVL3401T1G

Onsemi

MMVL3401T1G by Onsemi

MMVL3401T1G by Onsemi is a PIN diode with a max forward resistance of 0.7 ohm and a diode capacitance of 1 pF, suitable for very high frequency applications like switching. It operates at temperatures up to 150 °C, has a breakdown voltage of 35V, and features a gull wing terminal form in a small outline package style.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 944,221 parts In-Stock

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-

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$0.079

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$0.066

10k+ parts

$0.059

944,221

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$0.079

$0.066

$0.059

DigiKey

USA . 944,221 parts In-Stock

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$0.100

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$0.100

Verical

USA . 644,635 parts In-Stock

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$0.073

644,635

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$0.073

Distributors (In-Stock)

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Digiode

USA . 1,122 parts In-Stock

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$0.062

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DigiKey Marketplace

USA . 944,221 parts In-Stock

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Vyrian

USA . 3,723 parts In-Stock

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3,723

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Cogito LLC

Ukraine . 3,332 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 425 parts In-Stock

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$0.058

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425

$0.058

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Corohmni

South Africa . 56 parts In-Stock

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$0.065

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56

$0.065

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AZTECH Wire

Italy . 1,181 parts In-Stock

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$14.870

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$14.870

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Continental Prestige Electronics

USA . 944,221 parts In-Stock

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$0.059

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QUARKTWIN TECHNOLOGY LTD

USA . 26,592 parts In-Stock

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SupplyDigital Components

Austria . 7,248 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 5,259 parts In-Stock

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TANS Electronics

Latvia . 4,404 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 716 parts In-Stock

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Overview

Discover the power of the MMVL3401T1G by Onsemi, a high-quality PIN diode that offers endless possibilities for switching applications in the very high-frequency band. With Onsemi's reputation for excellence in manufacturing, this diode ensures reliability and performance like no other. Its small outline package and dual terminals make it versatile and easy to use. Experience the benefits of low forward resistance and high breakdown voltage, allowing for efficient operation and maximum power dissipation. Trust Onsemi to provide innovative solutions for all your electronic needs with the MMVL3401T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high-frequency operation, offering reliable signal switching.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for fast switching speeds and reduced signal distortion.

Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in this function.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Diode Forward Resistance: 0.7 ohm

Low forward resistance results in minimal power loss and efficient signal transmission.

Minimum Breakdown Voltage: 35 V

Withstands high voltage levels, ensuring reliability in diverse electronic circuits.

Diode Type: PIN DIODE

Positive-Intrinsic-Negative diode design offers high-speed switching and low distortion for optimal performance.

Technical Specifications

PIN Diodes MMVL3401T1G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

35 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.7 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL3401T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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