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MMVL3700T1G

Onsemi

MMVL3700T1G by Onsemi

MMVL3700T1G by Onsemi is a PIN diode with single configuration, suitable for very high frequency applications. It has a max diode capacitance of 1 pF and forward resistance of 1 ohm, making it ideal for switching operations. With a small outline package style and operating temperature up to 150 °C, this diode offers efficient performance in various electronic circuits.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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$0.020

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100

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Vyrian

USA . 3,165 parts In-Stock

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Digiode

USA . 1,572 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 246 parts In-Stock

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$12.010

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Component Stockers USA

USA . 279 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 42,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,741 parts In-Stock

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SupplyDigital Components

Austria . 3,631 parts In-Stock

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Kulean Microsystems

USA . 3,179 parts In-Stock

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Problanco Electronics

Mexico . 1,907 parts In-Stock

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Corphita

USA . 1,373 parts In-Stock

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UHIMA Technologies

Türkiye . 932 parts In-Stock

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TANS Electronics

Latvia . 420 parts In-Stock

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Corohmni

South Africa . 250 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the MMVL3700T1G PIN diode by Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance in every product. The MMVL3700T1G is perfect for switching applications in very high-frequency bands, offering low forward resistance and high breakdown voltage. With a small outline package and dual terminals, this PIN diode is easy to integrate into your designs. Trust Onsemi to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the design and integration of the diode into electronic circuits.

Frequency Band: VERY HIGH FREQUENCY

The very high frequency band capability allows for fast switching speeds and high performance in RF applications.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal distortion and efficient RF signal processing.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and mounting in electronic systems.

Application: SWITCHING

Designed for switching applications, providing reliable performance in high-frequency switching circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand demanding operating conditions.

Maximum Diode Forward Resistance: 1 ohm

Low forward resistance results in minimal power loss and efficient signal transmission.

Maximum Power Dissipation: 0.2 W

The diode can handle a maximum power dissipation of 0.2W, making it suitable for high-power applications.

Minimum Breakdown Voltage: 200 V

The high minimum breakdown voltage ensures reliable operation and protection against voltage spikes.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The positive-intrinsic-negative technology used in the diode allows for precise control and high performance in RF applications.

Technical Specifications

PIN Diodes MMVL3700T1G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

HIGH VOLTAGE

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL3700T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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