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BAR151E6327HTSA1

Infineon Technologies

BAR151E6327HTSA1 by Infineon Technologies

Infineon's BAR151E6327HTSA1 is a PIN diode with common cathode, 2 elements, and high frequency band. It has a max diode capacitance of 0.5 pF and is suitable for attenuator and switching applications. The diode operates at up to 150°C, with a forward resistance of 12 ohm and power dissipation of 0.25 W.

Median Price

$0.138

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

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$0.138

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700

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Chip Stock

USA . 45,600 parts In-Stock

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Vyrian

USA . 8,738 parts In-Stock

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VNN

France . 5,263 parts In-Stock

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Digiode

USA . 733 parts In-Stock

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733

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Distributors (Availability)

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Ampacity Inc.

Singapore . 595 parts In-Stock

1+ parts

$0.010

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595

$0.010

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Modulus Dynamics

Lithuania . 7,343 parts In-Stock

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$0.116

100+ parts

$0.111

1k+ parts

$0.107

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7,343

$0.116

$0.111

$0.107

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Corohmni

South Africa . 201 parts In-Stock

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$0.116

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201

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Continental Prestige Electronics

USA . 5,563 parts In-Stock

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$0.138

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$0.135

5,563

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Argo Parts USA

USA . 4,352 parts In-Stock

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$0.138

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$0.134

4,352

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Netroflash

USA . 500 parts In-Stock

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$0.138

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$0.131

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$0.128

500

$0.138

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$0.131

$0.128

Aztec Data Supply Inc.

USA . 3,697 parts In-Stock

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$0.175

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3,697

$0.175

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Semicontronic

India . 1,200 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

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$2.920

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1,200

$3.010

$2.935

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AZTECH Wire

Italy . 215 parts In-Stock

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$10.182

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Perfect Parts

USA . 117,354 parts In-Stock

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Lixinc

USA . 8,401 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,588 parts In-Stock

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3,588

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 328 parts In-Stock

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328

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Microchip USA

USA . 270 parts In-Stock

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270

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Overview

Discover the power of the BAR151E6327HTSA1 by Infineon Technologies, a top-quality PIN diode designed for high-frequency applications like attenuators and switching. With common cathode configuration and dual terminals, this small outline package offers superior performance and reliability. Infineon Technologies, known for its cutting-edge technology and innovation, ensures that this product delivers exceptional value to customers with its low diode capacitance, high breakdown voltage, and minimal forward resistance. Trust in Infineon Technologies for all your high-frequency needs and experience the difference with the BAR151E6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making the product long-lasting and reliable.

Frequency Band: HIGH FREQUENCY

Suitable for high-frequency applications, ensuring efficient performance in various electronic devices.

Maximum Diode Capacitance: 0.5 pF

Low diode capacitance allows for fast switching speeds and minimal signal distortion.

Maximum Diode Forward Resistance: 12 ohm

Low forward resistance ensures minimal loss and efficient signal transmission.

Maximum Power Dissipation: 0.25 W

Capable of handling moderate power levels without overheating, ensuring reliable operation.

Minimum Breakdown Voltage: 100 V

High breakdown voltage provides protection against voltage spikes, increasing the product's reliability.

Diode Type: PIN DIODE

PIN diodes are known for their fast response times and high-power handling capabilities, making them ideal for attenuator and switching applications.

Technical Specifications

PIN Diodes BAR151E6327HTSA1 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Additional Features:

LOW DISTORTION

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

100 V

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

.5 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

12 ohm

Diode Type:

Frequency Band:

HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR151E6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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