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GC4225-150B

Microchip Technology

GC4225-150B by Microchip Technology

GC4225-150B by Microchip Technology is a PIN diode with single configuration, operating in ultra high frequency to Ku band. It features a max diode capacitance of 0.5 pF and reverse test voltage of 10V. Ideal for applications such as attenuators, limiters, and switching due to its positive-intrinsic-negative technology.

Median Price

$29.460

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 80 parts In-Stock

1+ parts

$29.460

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$26.590

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$23.950

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80

$29.460

$26.590

$23.950

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Distributors (In-Stock)

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Nova Conductors

Japan . 89 parts In-Stock

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$23.950

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$23.950

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Vyrian

USA . 7,217 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 853 parts In-Stock

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$18.715

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853

$18.715

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Continental Prestige Electronics

USA . 6,426 parts In-Stock

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$23.950

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$23.471

6,426

$23.950

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$23.471

Netroflash

USA . 2,000 parts In-Stock

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$23.950

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$22.753

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$22.274

2,000

$23.950

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$22.753

$22.274

Ampacity Inc.

Singapore . 80 parts In-Stock

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$25.040

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80

$25.040

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Fulton Briggs Corp.

USA . 7,530 parts In-Stock

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7,530

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Argo Parts USA

USA . 3,681 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,838 parts In-Stock

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Overview

Unleash the power of advanced technology with Microchip Technology's GC4225-150B PIN Diode. Designed for ultra-high frequency to Ku band applications, this single-configured diode offers unparalleled performance and reliability. Whether you need an attenuator, limiter, or switching solution, this diode delivers exceptional value with its low diode capacitance, high breakdown voltage, and minimal forward resistance. Trust in Microchip Technology to provide you with top-quality components that meet MIL-19500 standards, ensuring your projects operate seamlessly even in the most demanding environments. Upgrade your designs today with the GC4225-150B PIN Diode and experience the difference that superior technology can make.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for ease of integration into various systems without the need for complex setups.

Frequency Band: ULTRA HIGH FREQUENCY TO KU BAND

Wide frequency band coverage from ultra high frequency to Ku band ensures versatility and compatibility with a range of applications.

Maximum Diode Capacitance: 0.5 pF

Low diode capacitance of 0.5 pF ensures minimal signal distortion and high switching speeds.

Reverse Test Voltage: 10 V

High reverse test voltage of 10 V allows for robust performance and protection against voltage spikes.

Application: ATTENUATOR; LIMITER; SWITCHING

Versatile applications including attenuator, limiter, and switching, making it suitable for a variety of functions in electronic systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures reliability and stability even in extreme environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C allows for use in colder environments while maintaining performance.

Maximum Diode Forward Resistance: 0.6 ohm

Low diode forward resistance of 0.6 ohm ensures minimal power loss and efficient signal transmission.

Nominal Minority Carrier Lifetime: 0.5 us

Short minority carrier lifetime of 0.5 us enables fast switching speeds and efficient signal handling.

Minimum Breakdown Voltage: 250 V

High minimum breakdown voltage of 250 V guarantees protection against voltage surges and ensures long-term reliability.

Diode Resistive Test Frequency: 1000 MHz

High test frequency of 1000 MHz ensures accurate and reliable performance testing for the diode.

Reference Standard: MIL-19500

Compliance with MIL-19500 standard ensures quality, reliability, and performance consistency.

Diode Resistive Test Current: 20 mA

Test current of 20 mA allows for precise measurement of diode characteristics and performance.

Diode Type: PIN DIODE

Usage of PIN diode technology offers high performance, low noise, and fast response times for various applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-Intrinsic-Negative technology offers improved linearity, lower distortion, and better control over signal handling.

Diode Element Material: SILICON

Use of silicon as diode element material ensures durability, stability, and consistent performance over time.

Technical Specifications

PIN Diodes GC4225-150B attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Additional Features:

HIGH RELIABILITY

Application:

ATTENUATOR; LIMITER; SWITCHING

Minimum Breakdown Voltage:

250 V

Config:

SINGLE

Maximum Diode Capacitance:

.5 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.6 ohm

Diode Resistive Test Current:

20 mA

Diode Resistive Test Frequency:

1000 MHz

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY TO KU BAND

Nominal Minority Carrier Lifetime:

.5 us

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Reference Standard:

MIL-19500

Reverse Test Voltage:

10 V

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Trade Compliance

GC4225-150B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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