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GC4225-150B/TR

Microchip Technology

GC4225-150B/TR by Microchip Technology

GC4225-150B/TR by Microchip Technology is a single PIN diode with a frequency band ranging from ultra high frequency to Ku band. It has a max diode capacitance of 0.5 pF and can be used in applications such as attenuators, limiters, and switching.

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,092 parts In-Stock

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8,092

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,434 parts In-Stock

1+ parts

$2.010

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1,434

$2.010

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AZTECH Wire

Italy . 474 parts In-Stock

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$6.050

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474

$6.050

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Aranea Global

USA . 100 parts In-Stock

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$23.628

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$22.683

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100

$23.628

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$22.683

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Continental Prestige Electronics

USA . 6,827 parts In-Stock

1+ parts

$24.110

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$23.628

6,827

$24.110

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$23.628

QUARKTWIN TECHNOLOGY LTD

USA . 22,370 parts In-Stock

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22,370

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XL Components Corporation

Australia . 6,342 parts In-Stock

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6,342

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QualityLine Systems

Poland . 3,712 parts In-Stock

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3,712

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Microchip USA

USA . 3,317 parts In-Stock

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Argo Parts USA

USA . 2,398 parts In-Stock

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2,398

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Marpe Global Electronics

Taiwan . 520 parts In-Stock

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520

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Overview

Discover the GC4225-150B/TR by Microchip Technology - a high-quality PIN diode designed to meet your needs! With its advanced technology and exceptional performance, this product offers numerous advantages. Whether you need it for attenuators, limiters, or switching applications, this versatile diode delivers outstanding results. Its ultra-high frequency to Ku band range ensures optimal functionality in various scenarios. Trust Microchip Technology, a renowned manufacturer known for their cutting-edge solutions. Unlock the value and benefits of the GC4225-150B/TR, and experience the advantage it brings to your projects.

Feature Benefit Bullets

Config:

SINGLE - The single configuration of this PIN Diode allows for easy integration and compatibility with various applications.

Frequency Band:

ULTRA HIGH FREQUENCY TO KU BAND - With a wide frequency band range, this PIN Diode is suitable for a diverse range of frequency-related applications.

Maximum Diode Capacitance:

0.5 pF - The low diode capacitance ensures minimal impact on signal quality and better overall performance in attenuators, limiters, and switching applications.

Reverse Test Voltage:

10 V - The PIN Diode's ability to withstand a reverse test voltage of 10 V guarantees reliable operation and increased durability.

Application:

ATTENUATOR; LIMITER; SWITCHING - This PIN Diode is versatile and can be effectively used in attenuators, limiters, and switching circuits to meet diverse requirements.

Maximum Operating Temperature:

150 °C - With a high maximum operating temperature of 150°C, this PIN Diode can withstand harsh or demanding operating conditions.

Minimum Operating Temperature:

55 °C - The low minimum operating temperature of -55°C ensures reliable performance even in extreme cold environments.

Maximum Diode Forward Resistance:

0.6 ohm - The PIN Diode's low forward resistance of 0.6 ohm contributes to low insertion loss and high isolation capabilities in various circuits.

Nominal Minority Carrier Lifetime:

0.5 us - The longer nominal minority carrier lifetime of 0.5 us helps in improving device efficiency and reducing distortion.

Minimum Breakdown Voltage:

250 V - With a minimum breakdown voltage of 250 V, this PIN Diode can handle high voltage applications safely and effectively.

Diode Resistive Test Frequency:

1000 MHz - The PIN Diode's resistive test frequency of 1000 MHz ensures accurate characterization and compatibility in RF applications.

Reference Standard:

MIL-19500 - Being compliant with the MIL-19500 standard ensures the PIN Diode's reliability and conformance to industry specifications.

Diode Resistive Test Current:

20 mA - The PIN Diode's resistive test current of 20 mA allows for precise testing and validation of its performance characteristics.

Diode Type:

PIN DIODE - The PIN Diode type offers fast switching speeds, low noise, and high linearity, making it an excellent choice for various RF applications.

Technology:

POSITIVE-INTRINSIC-NEGATIVE - This technology enables the PIN Diode to provide exceptional RF performance and precise control in numerous applications.

No. of Elements:

1 - The single element configuration simplifies design and integration, ensuring ease of use and cost-effectiveness.

Diode Element Material:

SILICON - The use of silicon as the diode element material provides excellent performance, reliability, and compatibility in a wide range of operating conditions.

Technical Specifications

PIN Diodes GC4225-150B/TR attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Additional Features:

HIGH RELIABILITY

Application:

ATTENUATOR; LIMITER; SWITCHING

Minimum Breakdown Voltage:

250 V

Config:

SINGLE

Maximum Diode Capacitance:

.5 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.6 ohm

Diode Resistive Test Current:

20 mA

Diode Resistive Test Frequency:

1000 MHz

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY TO KU BAND

Nominal Minority Carrier Lifetime:

.5 us

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Reference Standard:

MIL-19500

Reverse Test Voltage:

10 V

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Trade Compliance

GC4225-150B/TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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