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BAR6403WE6327XT

Infineon Technologies

BAR6403WE6327XT by Infineon Technologies

Infineon's BAR6403WE6327XT is a PIN diode with 0.35 pF capacitance, 1.35 ohm forward resistance, and 150V breakdown voltage. Ideal for attenuator and switching applications in medium frequency to C band range. Operates b/w -55°C to 125°C, AEC-Q101 compliant, with gull wing terminals for surface mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 3,650 parts In-Stock

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Digiode

USA . 843 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 391 parts In-Stock

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Modulus Dynamics

Lithuania . 22,341 parts In-Stock

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AZTECH Wire

Italy . 773 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Corphita

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the BAR6403WE6327XT by Infineon Technologies, a top-quality PIN diode that offers unparalleled performance and reliability. With its advanced technology and durable construction, this diode is perfect for applications such as attenuators and switching in medium frequency to C band devices. Experience the benefits of fast response times, low forward resistance, and high power dissipation capabilities. Trust Infineon Technologies to provide you with the highest quality components for your electronic needs. Elevate your project with the BAR6403WE6327XT today!

Feature Benefit Bullets

Spacing (Lead): 2.54 mm

The lead spacing of 2.54 mm makes it easy for the resistor network/array to be mounted on a PCB with standard hole spacing, ensuring compatibility and easy installation.

Element Power Dissipation: 0.12 W

With a high element power dissipation of 0.12 W, this resistor network/array can handle higher power loads, making it suitable for a variety of applications.

Rated Temperature: 70 °C

The rated temperature of 70°C ensures that the resistor network/array can operate effectively within a wide range of temperatures, enhancing its reliability.

No. of Functions: 5

With 5 functions in one component, this resistor network/array saves space on the PCB and simplifies circuit design, making it a versatile and efficient choice.

Technology: METAL GLAZE/THICK FILM

The metal glaze/thick film technology used in this resistor network/array ensures high precision and stability in resistance values, making it a reliable and accurate component.

Shape (Package): RECTANGULAR PACKAGE

The rectangular package shape allows for efficient packing and placement on the PCB, optimizing space and facilitating easy handling during assembly.

Terminal Finish: Tin/Lead (Sn63Pb37)

The tin/lead terminal finish provides good solderability and ensures reliable electrical connections, making assembly of the resistor network/array hassle-free and durable.

Operating Voltage: 50 V

With an operating voltage of 50 V, this resistor network/array is suitable for use in low to moderate voltage applications, offering a versatile solution for various circuit requirements.

Technical Specifications

PIN Diodes BAR6403WE6327XT attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Additional Features:

LOW DISTORTION

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

150 V

Config:

SINGLE

Maximum Diode Capacitance:

.35 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.35 ohm

Diode Type:

Frequency Band:

MEDIUM FREQUENCY TO C BAND

JESD-30 Code:

R-PDSO-G2

Nominal Minority Carrier Lifetime:

1.55 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAR6403WE6327XT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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