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BAR6302VH6327XT

Infineon Technologies

BAR6302VH6327XT by Infineon Technologies

Infineon's BAR6302VH6327XT is a PIN diode with 0.3 pF capacitance, 2 ohm forward resistance, and 50 V breakdown voltage. It is ideal for S Band applications like switching due to its positive-intrinsic-negative technology and small outline package style. Operating at up to 150°C, it offers reliable performance in various high-frequency systems.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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VNN

France . 804 parts In-Stock

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Digiode

USA . 321 parts In-Stock

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Vyrian

USA . 137 parts In-Stock

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Nova Conductors

Japan . 99 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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$0.072

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Aztec Data Supply Inc.

USA . 151 parts In-Stock

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Modulus Dynamics

Lithuania . 32,059 parts In-Stock

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$0.126

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Semicontronic

India . 1,617 parts In-Stock

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$2.010

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$1.960

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$1.950

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Ampacity Inc.

Singapore . 1,103 parts In-Stock

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AZTECH Wire

Italy . 479 parts In-Stock

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$17.937

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Argo Parts USA

USA . 1,840 parts In-Stock

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Continental Prestige Electronics

USA . 897 parts In-Stock

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Corphita

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Bastille Electronics

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Overview

Unlock the power of cutting-edge technology with the BAR6302VH6327XT by Infineon Technologies. Designed with precision and quality in mind, this PIN diode offers unparalleled performance in switching applications within the S band frequency range. With a maximum diode forward resistance of 2 ohms and a maximum power dissipation of 0.25 W, this product delivers reliable and efficient operation. Whether you're looking to enhance your RF systems or optimize your signal processing capabilities, the BAR6302VH6327XT is the perfect solution for your needs. Elevate your projects to new heights with this innovative and versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making the product suitable for various industrial applications.

Frequency Band: S BAND

Operating in the S band frequency range allows for efficient signal transmission and reception in radar and communication systems.

Maximum Diode Capacitance: 0.3 pF

Low diode capacitance ensures minimal signal distortion and high-frequency operation, making it ideal for fast switching applications.

Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and reliability in rapidly changing circuit conditions.

Maximum Power Dissipation: 0.25 W

With a high maximum power dissipation value, the diode can handle higher power levels without risking damage, providing stability in operation.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The PIN diode technology offers fast response times, low distortion, and high power handling capabilities, making it ideal for high-frequency applications.

Technical Specifications

PIN Diodes BAR6302VH6327XT attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.075 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR6302VH6327XT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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