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BAR6303WE6327HTSA1

Infineon Technologies

BAR6303WE6327HTSA1 by Infineon Technologies

Infineon's BAR6303WE6327HTSA1 is a PIN diode with 0.3 pF capacitance, 2 ohm forward resistance, and 50 V breakdown voltage. Ideal for S Band applications like switching due to its small outline package and high operating temperature of 150°C.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Arrow

USA . 73,117 parts In-Stock

1+ parts

$0.136

100+ parts

$0.064

1k+ parts

$0.049

10k+ parts

-

73,117

$0.136

$0.064

$0.049

-

Mouser Electronics

USA . 250 parts In-Stock

1+ parts

$0.140

100+ parts

$0.066

1k+ parts

$0.059

10k+ parts

$0.052

250

$0.140

$0.066

$0.059

$0.052

Newark

USA . 2,102 parts In-Stock

1+ parts

$0.144

100+ parts

$0.068

1k+ parts

$0.061

10k+ parts

-

2,102

$0.144

$0.068

$0.061

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DigiKey

USA . 8,724 parts In-Stock

1+ parts

$0.150

100+ parts

$0.073

1k+ parts

$0.060

10k+ parts

$0.053

8,724

$0.150

$0.073

$0.060

$0.053

Verical

USA . 408,000 parts In-Stock

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408,000

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Element14

Singapore . 46,142 parts In-Stock

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-

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$0.118

1k+ parts

$0.066

10k+ parts

$0.062

46,142

-

$0.118

$0.066

$0.062

Farnell

UK . 32,386 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.065

10k+ parts

$0.060

32,386

-

$0.122

$0.065

$0.060

RS (Exports)

UK . 10,075 parts In-Stock

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$0.064

10,075

-

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$0.064

Rochester

USA . 4,589 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

4,589

-

$0.062

$0.051

$0.046

EBV Elektronik

Germany . 3,000 parts In-Stock

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3,000

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Chip1Stop

Japan . 1,321 parts In-Stock

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$0.044

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$0.044

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$0.043

1,321

-

$0.044

$0.044

$0.043

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 657 parts In-Stock

1+ parts

$0.048

100+ parts

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657

$0.048

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Nova Conductors

Japan . 150 parts In-Stock

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$0.073

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150

$0.073

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TME

Poland . 2,074 parts In-Stock

1+ parts

$0.140

100+ parts

$0.070

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-

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2,074

$0.140

$0.070

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Vyrian

USA . 58,968 parts In-Stock

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58,968

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IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

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$0.068

6,000

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$0.068

NAC Semi

USA . 3,000 parts In-Stock

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$0.278

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$0.278

VNN

France . 100 parts In-Stock

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100

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Semicontronic

India . 57,667 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

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57,667

$0.037

$0.036

$0.036

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Aztec Data Supply Inc.

USA . 587 parts In-Stock

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$0.044

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587

$0.044

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Corphita

USA . 461 parts In-Stock

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$0.045

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461

$0.045

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Argo Parts USA

USA . 2,365 parts In-Stock

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$0.073

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$0.071

2,365

$0.073

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$0.071

Netroflash

USA . 500 parts In-Stock

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$0.073

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$0.072

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$0.073

$0.072

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Ampacity Inc.

Singapore . 55,762 parts In-Stock

1+ parts

$0.080

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$0.080

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Modulus Dynamics

Lithuania . 25,058 parts In-Stock

1+ parts

$0.093

100+ parts

$0.089

1k+ parts

$0.086

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25,058

$0.093

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$0.086

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Corohmni

South Africa . 1,002 parts In-Stock

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$0.093

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$0.093

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Continental Prestige Electronics

USA . 23,426 parts In-Stock

1+ parts

$0.380

100+ parts

$0.143

1k+ parts

$0.071

10k+ parts

$0.047

23,426

$0.380

$0.143

$0.071

$0.047

Epart123

USA . 150,000 parts In-Stock

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Perfect Parts

USA . 65,435 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Overview

Elevate your switching applications with the BAR6303WE6327HTSA1 by Infineon Technologies. Crafted with precision and expertise, this PIN Diode offers unparalleled quality and reliability. Whether you're in the S Band frequency band or looking for a high-performance solution, this product delivers outstanding value and benefits. Its low diode capacitance, minimal forward resistance, and small outline package make it the ideal choice for your projects. Trust Infineon Technologies to provide you with top-notch technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it a reliable choice for various applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly for different projects.

Frequency Band: S BAND

Operating in the S band frequency allows for efficient signal processing and communication, making this diode suitable for radar and telecommunications systems.

Surface Mount: YES

The surface mount capability enables easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Diode Capacitance: 0.3 pF

With low capacitance, this diode can handle high-frequency applications with minimal signal distortion, ensuring accuracy in switching operations.

Package Shape: RECTANGULAR

The rectangular shape of the package offers versatility in placement and mounting options, allowing for flexibility in design layouts.

Number of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing the chances of wiring errors and ensuring a secure electrical connection.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices, making it ideal for portable applications.

Application: SWITCHING

Designed for switching applications, this diode offers fast response times and low power dissipation, making it efficient in controlling signals.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this diode can withstand harsh environmental conditions, ensuring reliability in various settings.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and excellent solderability, ensuring a secure electrical connection for long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in wiring configurations, allowing for easy integration into different circuit designs.

Maximum Diode Forward Resistance: 2 ohm

The low forward resistance minimizes power loss and heat generation, making this diode energy-efficient and cost-effective.

Maximum Power Dissipation: 0.25 W

With a high power dissipation capacity, this diode can handle higher power levels without compromising performance, making it suitable for demanding applications.

Nominal Minority Carrier Lifetime: 0.075 us

The short minority carrier lifetime ensures fast switching speeds and low signal distortion, making this diode ideal for high-frequency operations.

Minimum Breakdown Voltage: 50 V

The high breakdown voltage rating provides protection against voltage spikes and overloads, enhancing the diode's reliability in different circuit conditions.

Diode Type: PIN DIODE

The PIN diode design offers fast response times and low distortion, making it suitable for high-frequency applications requiring precise signal control.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The PIN technology provides low noise and high linearity, making this diode suitable for RF and microwave signal processing applications.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting onto circuit boards, ensuring secure connections and efficient signal transmission.

Diode Element Material: SILICON

Using silicon as the diode element material provides durability and stability, making this diode a reliable choice for long-term use.

Technical Specifications

PIN Diodes BAR6303WE6327HTSA1 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.075 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR6303WE6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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