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NSVDP301MX2WT5G

Onsemi

NSVDP301MX2WT5G by Onsemi

NSVDP301MX2WT5G by Onsemi is a PIN diode with high frequency band, suitable for attenuator and switching applications. It has a reverse test voltage of 0V, min breakdown voltage of 80V, and nominal diode capacitance of 0.33pF. Operating temperature ranges from -55 °C to 150°C.

Median Price

$0.393

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 16,000 parts In-Stock

1+ parts

$0.650

100+ parts

$0.240

1k+ parts

$0.162

10k+ parts

$0.127

16,000

$0.650

$0.240

$0.162

$0.127

Mouser Electronics

USA . 4,941 parts In-Stock

1+ parts

$1.040

100+ parts

$0.460

1k+ parts

$0.210

10k+ parts

$0.141

4,941

$1.040

$0.460

$0.210

$0.141

Verical

USA . 208,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

208,000

-

-

-

$0.101

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.136

1k+ parts

$0.113

10k+ parts

$0.101

10,000

-

$0.136

$0.113

$0.101

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 740 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

-

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-

740

$0.105

-

-

-

Vyrian

USA . 858 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

10k+ parts

-

858

$0.111

-

-

-

Flip Electronics

USA . 3,700 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,292 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

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1,292

$0.100

-

-

-

Component Stockers USA

USA . 48,499 parts In-Stock

1+ parts

$0.110

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.100

48,499

$0.110

$0.110

$0.100

$0.100

Corohmni

South Africa . 436 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

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436

$0.111

-

-

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iodParts Technologies Inc.

India . 88,000 parts In-Stock

1+ parts

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100+ parts

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88,000

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SupplyDigital Components

Austria . 6,901 parts In-Stock

1+ parts

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100+ parts

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6,901

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Kulean Microsystems

USA . 6,349 parts In-Stock

1+ parts

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100+ parts

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6,349

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Problanco Electronics

Mexico . 4,443 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,443

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TANS Electronics

Latvia . 4,430 parts In-Stock

1+ parts

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4,430

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UHIMA Technologies

Türkiye . 188 parts In-Stock

1+ parts

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188

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Overview

Enhance your electronic designs with the NSVDP301MX2WT5G PIN Diode by Onsemi. Known for their exceptional quality and reliability, Onsemi delivers cutting-edge technology that ensures superior performance in high frequency applications such as attenuators and switching systems. With a temperature range of -55 to 150 °C, this diode offers unmatched durability and precision. Trust Onsemi to provide you with the value and benefits you need to take your projects to the next level. Elevate your designs with the NSVDP301MX2WT5G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Config: SINGLE

Single configuration simplifies installation and usage.

Frequency Band: HIGH FREQUENCY

High frequency band allows for quick and efficient signal processing.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and fits well in compact designs.

Reverse Test Voltage: 0 V

A reverse test voltage of 0V ensures safety in different circuit configurations.

No. of Terminals: 2

Having two terminals simplifies connection and reduces complexity.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for dense PCB layouts.

Application: ATTENUATOR; SWITCHING

Suitable for attenuator and switching applications, offering versatility in usage.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold finish provides corrosion resistance and improved conductivity.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections.

Nominal Diode Capacitance: 0.33 pF

Low diode capacitance helps in high-frequency applications with minimal signal distortion.

Minimum Breakdown Voltage: 80 V

High minimum breakdown voltage ensures protection against voltage spikes and surges.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds maximum time at peak reflow temperature ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper melting of solder for secure connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability for automotive applications.

Diode Type: PIN DIODE

PIN diodes offer fast switching speeds and high linearity, suitable for RF applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology enhances diode performance for optimal signal handling.

Terminal Form: NO LEAD

No-lead terminal form is environmentally friendly and facilitates automated assembly.

Diode Element Material: SILICON

Silicon diode element material provides durability and stability in operation.

Technical Specifications

PIN Diodes NSVDP301MX2WT5G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Nominal Diode Capacitance:

.33 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

HIGH FREQUENCY

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Reverse Test Voltage:

0 V

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSVDP301MX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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