Loading...

MPN3404RLRP

Onsemi

MPN3404RLRP by Onsemi

The Onsemi MPN3404RLRP is a PIN diode with very high frequency band, 2 pF diode capacitance, and 0.85 ohm forward resistance. It is used for switching applications at up to 125 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,006

-

-

-

-

Digiode

USA . 697 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

697

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,828

-

-

-

-

SupplyDigital Components

Austria . 6,158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,158

-

-

-

-

Problanco Electronics

Mexico . 5,385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,385

-

-

-

-

Corphita

USA . 657 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

657

-

-

-

-

Kulean Microsystems

USA . 599 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

599

-

-

-

-

Corohmni

South Africa . 479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

479

-

-

-

-

UHIMA Technologies

Türkiye . 370 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

370

-

-

-

-

Overview

Unleash the power of the MPN3404RLRP PIN diode by Onsemi, a top-tier manufacturer known for quality and reliability. This very high-frequency diode is perfect for switching applications, offering a low forward resistance of 0.85 ohm and a maximum power dissipation of 0.4W. With a minimum breakdown voltage of 20V and a diode capacitance of 2pF, this product ensures optimal performance and efficiency. Trust Onsemi to deliver groundbreaking technology in a sleek cylindrical package, providing customers with the value and benefits they need for their electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into electronic systems.

Frequency Band: VERY HIGH FREQUENCY

Ideal for high-frequency applications where fast response times and low signal loss are crucial.

Maximum Diode Capacitance: 2 pF

Low capacitance allows for high-speed switching operations and minimal signal distortion.

Package Shape: ROUND

Easily mountable and space-efficient, suitable for compact electronic designs.

No. of Terminals: 2

Simplified connectivity and installation in circuitry.

Package Style (Meter): CYLINDRICAL

Offers a standard, industry-compatible form factor for easy interchangeability.

Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in these scenarios.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures without compromising performance or reliability.

Terminal Finish: TIN LEAD

Provides good conductivity and ensures secure solder connections for stable performance.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering in electronic circuits.

Maximum Diode Forward Resistance: 0.85 ohm

Low forward resistance results in minimal power loss and efficient operation.

Maximum Power Dissipation: 0.4 W

Capable of handling moderate power levels without overheating or performance degradation.

Minimum Breakdown Voltage: 20 V

Provides a safe operating margin and protection against voltage spikes or surges.

Diode Type: PIN DIODE

Specifically designed for high-speed and high-frequency applications, offering superior performance in these scenarios.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Incorporates a well-established technology known for its reliability and efficiency in electronic circuits.

Terminal Form: THROUGH-HOLE

Allows for easy mounting on PCBs and secure soldering connections.

Diode Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its performance and durability in electronic components.

Technical Specifications

PIN Diodes MPN3404RLRP attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.85 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3404RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20