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MPN3404ZL1

Onsemi

MPN3404ZL1 by Onsemi

MPN3404ZL1 by Onsemi is a PIN diode with very high frequency band, 2 pF capacitance, and 0.85 ohm forward resistance. It is used for switching applications at up to 125 °C operating temperature. The diode has a breakdown voltage of 20V and can dissipate up to 0.4W power in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,059 parts In-Stock

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Vyrian

USA . 689 parts In-Stock

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Kulean Microsystems

USA . 6,139 parts In-Stock

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SupplyDigital Components

Austria . 3,465 parts In-Stock

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Problanco Electronics

Mexico . 1,965 parts In-Stock

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TANS Electronics

Latvia . 1,312 parts In-Stock

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Corphita

USA . 247 parts In-Stock

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Corohmni

South Africa . 101 parts In-Stock

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Overview

Unlock the power of high-frequency switching with the MPN3404ZL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality PIN Diodes that offer exceptional performance and reliability. Whether you're looking to optimize your RF signal switching or enhance your circuit design, this product is the perfect solution. With a maximum diode capacitance of 2pF and a minimum breakdown voltage of 20V, the MPN3404ZL1 provides unmatched value and efficiency. Trust Onsemi for all your switching needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the design and implementation of the diode in circuits, making it easier to use.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this diode is ideal for use in applications requiring high-speed switching and performance.

Maximum Diode Capacitance: 2 pF

Low diode capacitance ensures minimal signal distortion and high-speed operation, making it suitable for high-frequency applications.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuits, providing versatility in design.

No. of Terminals: 2

Having two terminals simplifies the connection process and enables easy integration into circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers ease of handling and mounting in various equipment and applications.

Application: SWITCHING

Designed specifically for switching applications, this diode ensures efficient and reliable performance in switching circuits.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable operation in various environments without risk of overheating.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures a secure electrical connection.

Terminal Position: BOTTOM

Bottom terminal position simplifies the mounting and connection process, making it easier to integrate into circuits.

Maximum Diode Forward Resistance: 0.85 ohm

Low forward resistance ensures minimal signal loss and efficient signal transmission in circuits.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows the diode to handle high power levels without the risk of overheating or damage.

Minimum Breakdown Voltage: 20 V

High minimum breakdown voltage ensures the diode can withstand voltage spikes and variations, providing reliable performance.

Diode Type: PIN DIODE

PIN diode design offers fast response times and low noise performance, making it suitable for high-speed switching applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology ensures high performance and reliability in various applications requiring signal switching.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy and secure mounting on PCBs, ensuring reliable connections in circuits.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and high performance in various operating conditions.

Technical Specifications

PIN Diodes MPN3404ZL1 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Application:

SWITCHING

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.85 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3404ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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