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MPN3404

Onsemi

MPN3404 by Onsemi

The Onsemi MPN3404 is a PIN diode with a single configuration, ideal for very high frequency applications. With a max diode capacitance of 2 pF and forward resistance of 0.85 ohm, it operates at temperatures up to 125 °C. Commonly used in switching circuits, this diode has a breakdown voltage of 20 V and can handle a power dissipation of 0.4 W.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 2,290,562 parts In-Stock

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Electronic Expediters

USA . 5,692 parts In-Stock

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Inventory MP

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Bristol Electronics

USA . 1,850 parts In-Stock

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Vyrian

USA . 1,613 parts In-Stock

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Prism Electronics

USA . 1,002 parts In-Stock

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Digiode

USA . 986 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 700 parts In-Stock

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J & M Industries LLC

USA . 628 parts In-Stock

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DF Sales Co.

USA . 348 parts In-Stock

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DF Sales Co.

USA . 348 parts In-Stock

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First Choice Components Inc.

USA . 50 parts In-Stock

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Resion

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LWI Electronics Inc

India . 33 parts In-Stock

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Mil-Aero Solutions, Inc.

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LittleDiode

UK . 5 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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Problanco Electronics

Mexico . 8,321 parts In-Stock

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SupplyDigital Components

Austria . 7,856 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 5,725 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 700 parts In-Stock

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Glotronic Ltd.

UK . 560 parts In-Stock

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Assy Fe

Spain . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the MPN3404 by Onsemi, a leading manufacturer in the industry. This PIN diode offers exceptional performance in very high-frequency applications, making it ideal for switching circuits. With a low forward resistance and high breakdown voltage, this product ensures efficiency and durability. Trust Onsemi to provide cutting-edge technology that meets your needs and surpasses expectations. Elevate your projects with the MPN3404 and experience the difference in quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package light in weight and resistant to environmental factors, ensuring durability and reliability.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency operation, providing fast response times and efficient switching capabilities.

Maximum Diode Capacitance: 2 pF

Low diode capacitance allows for minimal signal distortion and high speed operation in switching applications.

Maximum Power Dissipation: 0.4 W

High power dissipation capability ensures the diode can handle energy efficiently without overheating, increasing overall reliability.

Minimum Breakdown Voltage: 20 V

High breakdown voltage provides protection against excessive voltage levels, enhancing the diode's stability and longevity.

Technical Specifications

PIN Diodes MPN3404 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

HIGH VOLTAGE

Application:

SWITCHING

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Nominal Diode Capacitance:

1.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.85 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Reverse Test Voltage:

15 V

Sub-Category:

PIN Diodes

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3404 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-282-0065, 5961012820065

NIIN

012820065

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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