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MPN3404RLRE

Onsemi

MPN3404RLRE by Onsemi

MPN3404RLRE by Onsemi is a PIN diode with very high frequency band, 2 pF diode capacitance, and 0.85 ohm forward resistance. It is used for switching applications at up to 125 °C operating temperature.

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Lifecycle Status

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1k+

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Digiode

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Vyrian

USA . 1,212 parts In-Stock

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Austria . 7,365 parts In-Stock

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Kulean Microsystems

USA . 6,472 parts In-Stock

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Problanco Electronics

Mexico . 5,795 parts In-Stock

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Corphita

USA . 2,071 parts In-Stock

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TANS Electronics

Latvia . 799 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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UHIMA Technologies

Türkiye . 59 parts In-Stock

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Overview

Looking for a reliable and high-quality PIN Diode for your switching applications? Look no further than the MPN3404RLRE by Onsemi! With a very high frequency range and low diode capacitance, this single diode offers exceptional performance and efficiency. Its positive-intrinsic-negative technology ensures reliable operation, while its robust construction guarantees durability. Trust Onsemi's expertise in semiconductor manufacturing to provide you with a top-notch product that meets your needs and exceeds your expectations. Choose the MPN3404RLRE for superior quality and performance in your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, making it suitable for various environments.

Config: SINGLE

Simplified configuration for easier integration and usage.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high-frequency operation.

Maximum Diode Capacitance: 2 pF

Low capacitance ensures minimal interference and high-speed switching.

Package Shape: ROUND

Compact design for efficient use of space.

No. of Terminals: 2

Simplified connection setup.

Package Style (Meter): CYLINDRICAL

Easy to handle and install.

Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability.

Terminal Position: BOTTOM

Facilitates easy and secure mounting on a PCB.

Maximum Diode Forward Resistance: 0.85 ohm

Low resistance for efficient signal transmission.

Maximum Power Dissipation: 0.4 W

Can handle moderate power levels effectively.

Minimum Breakdown Voltage: 20 V

Suitable for applications requiring voltage protection.

Diode Type: PIN DIODE

Ideal for RF and microwave applications due to its fast switching times.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Offers high performance and reliability.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure connections on a PCB.

Diode Element Material: SILICON

Provides good electrical properties for efficient signal handling.

Technical Specifications

PIN Diodes MPN3404RLRE attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.85 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3404RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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