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MPN3404G

Onsemi

MPN3404G by Onsemi

The Onsemi MPN3404G is a PIN diode with very high frequency band, 2 pF diode capacitance, and 0.85 ohm forward resistance. Ideal for switching applications, it operates at up to 125 °C with a breakdown voltage of 20V.

Median Price

$0.191

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,593 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

1,593

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$0.172

$0.143

$0.127

DigiKey

USA . 1,593 parts In-Stock

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-

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$0.210

1,593

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$0.210

Distributors (In-Stock)

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Digiode

USA . 2,484 parts In-Stock

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$0.134

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2,484

$0.134

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Chip Stock

USA . 9,562 parts In-Stock

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Vyrian

USA . 8,700 parts In-Stock

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8,700

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Distributors (Availability)

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Corphita

USA . 1,938 parts In-Stock

1+ parts

$0.127

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1,938

$0.127

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Corohmni

South Africa . 391 parts In-Stock

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$0.128

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391

$0.128

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Component Stockers USA

USA . 3,934 parts In-Stock

1+ parts

$0.140

100+ parts

$0.130

1k+ parts

$0.120

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-

3,934

$0.140

$0.130

$0.120

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Advanced Electronics

New Zealand . 97 parts In-Stock

1+ parts

$0.190

100+ parts

$0.173

1k+ parts

$0.156

10k+ parts

-

97

$0.190

$0.173

$0.156

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AZTECH Wire

Italy . 1,029 parts In-Stock

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$12.360

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1,029

$12.360

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QUARKTWIN TECHNOLOGY LTD

USA . 21,208 parts In-Stock

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TANS Electronics

Latvia . 7,624 parts In-Stock

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Kulean Microsystems

USA . 5,090 parts In-Stock

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Problanco Electronics

Mexico . 4,667 parts In-Stock

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Continental Prestige Electronics

USA . 4,188 parts In-Stock

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$0.128

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SupplyDigital Components

Austria . 1,464 parts In-Stock

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UHIMA Technologies

Türkiye . 533 parts In-Stock

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Overview

Unlock the power of very high frequency switching with the MPN3404G PIN diode by Onsemi. Crafted with precision and quality, this single-configured diode offers a reliable solution for applications requiring fast and efficient switching capabilities. With a low forward resistance and high breakdown voltage, this diode ensures optimal performance even in the most demanding environments. Trust Onsemi's expertise in semiconductor technology to deliver a product that exceeds expectations. Elevate your designs with the MPN3404G and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and affordable, making the product cost-effective and easy to handle.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high-frequency operation, ensuring efficient performance.

Maximum Diode Capacitance: 2 pF

Low capacitance allows for faster switching speeds and improved signal integrity.

Reverse Test Voltage: 15 V

With a high reverse test voltage, the diode can handle greater voltage stresses, enhancing reliability.

Application: SWITCHING

Designed specifically for switching applications, ensuring precise and efficient performance.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without degradation, suitable for various environments.

Diode Type: PIN DIODE

PIN diodes offer high reliability and low distortion, making them suitable for critical applications.

Technical Specifications

PIN Diodes MPN3404G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

HIGH VOLTAGE

Application:

SWITCHING

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Nominal Diode Capacitance:

1.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.85 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Reverse Test Voltage:

15 V

Sub-Category:

PIN Diodes

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Trade Compliance

MPN3404G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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