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MPN3700RLRA

Onsemi

MPN3700RLRA by Onsemi

The Onsemi MPN3700RLRA is a PIN diode with 1 pF capacitance, 1 ohm forward resistance, and 200V breakdown voltage. It operates in the very high-frequency band for switching applications at up to 125 °C. The diode features a cylindrical package with tin-lead terminals in a through-hole configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,243 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,210 parts In-Stock

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Kulean Microsystems

USA . 2,084 parts In-Stock

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Problanco Electronics

Mexico . 1,378 parts In-Stock

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TANS Electronics

Latvia . 953 parts In-Stock

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Corphita

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Corohmni

South Africa . 135 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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Overview

Unlock the power of very high frequency switching with the MPN3700RLRA PIN Diode by Onsemi. Crafted with precision and expertise, this product offers unrivaled quality and reliability, making it the perfect choice for a wide range of applications. From telecommunications to radar systems, this diode excels in performance, offering low diode capacitance and forward resistance, ensuring maximum efficiency and durability. Trust Onsemi to deliver cutting-edge technology that delivers value and benefits to customers, empowering your projects to reach new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Frequency Band: VERY HIGH FREQUENCY

Suitable for applications requiring high-frequency signals, offering excellent performance in such scenarios.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for fast switching speeds and minimal signal distortion.

Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, making it versatile for various environments.

Maximum Diode Forward Resistance: 1 ohm

Low forward resistance results in minimal signal loss during operation.

Minimum Breakdown Voltage: 200 V

High breakdown voltage tolerance provides protection against voltage spikes, enhancing overall reliability.

Diode Type: PIN DIODE

PIN diodes are known for their fast response times and low distortion, making them ideal for high-frequency applications.

Diode Element Material: SILICON

Silicon diodes offer stable and consistent performance, ensuring reliable operation.

Technical Specifications

PIN Diodes MPN3700RLRA attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3700RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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