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1SV249-TL-E

Onsemi

1SV249-TL-E by Onsemi

1SV249-TL-E by Onsemi is a PIN diode with TIN BISMUTH finish. It can withstand peak reflow temp of 260 °C for 30s. Featuring POSITIVE-INTRINSIC-NEGATIVE tech, it's ideal for RF switches and attenuators in communication systems.

Median Price

$0.182

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.178

1k+ parts

$0.148

10k+ parts

$0.132

3,000

-

$0.178

$0.148

$0.132

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.185

3,000

-

-

-

$0.185

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,185 parts In-Stock

1+ parts

$0.142

100+ parts

-

1k+ parts

-

10k+ parts

-

1,185

$0.142

-

-

-

Digiode

USA . 1,776 parts In-Stock

1+ parts

$0.145

100+ parts

-

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-

1,776

$0.145

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,884 parts In-Stock

1+ parts

$0.138

100+ parts

-

1k+ parts

-

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-

1,884

$0.138

-

-

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Corohmni

South Africa . 269 parts In-Stock

1+ parts

$0.142

100+ parts

-

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-

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-

269

$0.142

-

-

-

Native Components

USA . 264 parts In-Stock

1+ parts

$1.014

100+ parts

-

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-

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264

$1.014

-

-

-

Northwest PG Solutions

USA . 1,131 parts In-Stock

1+ parts

$1.116

100+ parts

-

1k+ parts

-

10k+ parts

-

1,131

$1.116

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 9,708 parts In-Stock

1+ parts

-

100+ parts

-

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9,708

-

-

-

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Kulean Microsystems

USA . 6,575 parts In-Stock

1+ parts

-

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6,575

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-

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SupplyDigital Components

Austria . 4,642 parts In-Stock

1+ parts

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100+ parts

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4,642

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-

-

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Problanco Electronics

Mexico . 3,132 parts In-Stock

1+ parts

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100+ parts

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3,132

-

-

-

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.139

10k+ parts

-

3,000

-

-

$0.139

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UHIMA Technologies

Türkiye . 612 parts In-Stock

1+ parts

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100+ parts

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612

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TANS Electronics

Latvia . 128 parts In-Stock

1+ parts

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100+ parts

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128

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Overview

Unlock a world of endless possibilities with the 1SV249-TL-E PIN diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. Ideal for applications in RF switches, attenuators, and phase shifters, this PIN diode offers unmatched performance and efficiency. Experience seamless operation and enhanced functionality with the 1SV249-TL-E, providing value and benefits that exceed expectations. Elevate your projects with Onsemi's cutting-edge technology and precision engineering.

Feature Benefit Bullets

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliability, making the product suitable for a wide range of applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, the product ensures efficient and reliable soldering processes, reducing the risk of component damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for robust soldering connections, enhancing the overall durability of the product.

Diode Type: PIN DIODE

The PIN diode design offers low resistance and high switching speed, making it ideal for RF applications where fast response times are crucial.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The positive-intrinsic-negative technology used in the diode ensures efficient signal detection and modulation, enhancing the product's performance in signal processing applications.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, making the diode elements in the product highly durable and long-lasting.

Technical Specifications

PIN Diodes 1SV249-TL-E attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SV249-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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