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1SV247

Onsemi

1SV247 by Onsemi

1SV247 by Onsemi is a PIN diode with 0.23 pF capacitance, 5 ohm forward resistance, and 50V breakdown voltage. Ideal for RF switches in communication systems due to its small outline package and silicon element material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 939 parts In-Stock

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Vyrian

USA . 342 parts In-Stock

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342

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Native Components

USA . 199 parts In-Stock

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$2.070

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199

$2.070

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Northwest PG Solutions

USA . 2,097 parts In-Stock

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$2.277

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2,097

$2.277

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SupplyDigital Components

Austria . 8,327 parts In-Stock

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Problanco Electronics

Mexico . 7,219 parts In-Stock

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TANS Electronics

Latvia . 4,914 parts In-Stock

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4,914

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Corphita

USA . 1,861 parts In-Stock

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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Kulean Microsystems

USA . 80 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the 1SV247 PIN Diode. Perfect for a variety of applications, this product offers unmatched performance and efficiency. With Onsemi's reputation for excellence, you can trust that you are getting a top-tier product that delivers exceptional value. Enhance your projects with the cutting-edge technology of the 1SV247 and unlock new possibilities in your designs. Trust Onsemi to provide you with the best in class products for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective, making it a suitable choice for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Diode Capacitance: 0.23 pF

Low diode capacitance ensures high-frequency performance and minimal signal distortion, making this product ideal for high-speed applications.

No. of Terminals: 3

Having three terminals provides flexibility in circuit connections and enables more complex circuit designs.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options, enhancing compatibility with different circuit configurations.

Maximum Diode Forward Resistance: 5 ohm

Low diode forward resistance results in minimal power loss and efficient signal transmission, making this product suitable for high-performance applications.

Minimum Breakdown Voltage: 50 V

A minimum breakdown voltage of 50 V ensures reliable operation and protection against voltage spikes, enhancing the product's durability.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, temperature stability, and wide voltage tolerance, making this product suitable for diverse electronic applications.

Technical Specifications

PIN Diodes 1SV247 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.23 pF

Nominal Diode Capacitance:

.23 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

5 ohm

Diode Type:

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Sub-Category:

PIN Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

1SV247 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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