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1SV233-TB-E

Onsemi

1SV233-TB-E by Onsemi

1SV233-TB-E by Onsemi is a PIN diode with TIN BISMUTH finish. It can withstand 30s at 260°C peak reflow temperature. Utilized in RF switches, attenuators, and phase shifters due to its positive-intrinsic-negative technology.

Median Price

$0.178

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 165,000 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

165,000

-

$0.185

$0.153

$0.137

DigiKey

USA . 165,000 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.230

165,000

-

-

-

$0.230

Verical

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

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$0.171

96,000

-

-

-

$0.171

Chip1Stop

Japan . 125 parts In-Stock

1+ parts

-

100+ parts

$0.083

1k+ parts

-

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125

-

$0.083

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,648 parts In-Stock

1+ parts

$0.144

100+ parts

-

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1,648

$0.144

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.163

100+ parts

-

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100

$0.163

-

-

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Bristol Electronics

USA . 1,523 parts In-Stock

1+ parts

$0.750

100+ parts

$0.375

1k+ parts

$0.150

10k+ parts

-

1,523

$0.750

$0.375

$0.150

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DigiKey Marketplace

USA . 162,000 parts In-Stock

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162,000

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Vyrian

USA . 118,149 parts In-Stock

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118,149

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ACDS - Activité Composants Distribution Service

France . 1,523 parts In-Stock

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1,523

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Dan-Mar Components

USA . 1,523 parts In-Stock

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1,523

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 117,841 parts In-Stock

1+ parts

$0.071

100+ parts

$0.069

1k+ parts

$0.069

10k+ parts

-

117,841

$0.071

$0.069

$0.069

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Corohmni

South Africa . 111 parts In-Stock

1+ parts

$0.083

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111

$0.083

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Corphita

USA . 1,633 parts In-Stock

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$0.137

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1,633

$0.137

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.159

100+ parts

-

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$0.153

10k+ parts

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50

$0.159

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$0.153

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Argo Parts USA

USA . 2,255 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

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10k+ parts

$0.158

2,255

$0.163

-

-

$0.158

Continental Prestige Electronics

USA . 162,000 parts In-Stock

1+ parts

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100+ parts

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$0.172

10k+ parts

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162,000

-

-

$0.172

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Kepictronics

USA . 16,000 parts In-Stock

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16,000

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SupplyDigital Components

Austria . 5,516 parts In-Stock

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5,516

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-

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Problanco Electronics

Mexico . 3,897 parts In-Stock

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3,897

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Perfect Parts

USA . 3,282 parts In-Stock

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3,282

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Kulean Microsystems

USA . 3,109 parts In-Stock

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3,109

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TANS Electronics

Latvia . 2,932 parts In-Stock

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2,932

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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UHIMA Technologies

Türkiye . 606 parts In-Stock

1+ parts

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606

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Overview

Unlock the power of precision with the 1SV233-TB-E PIN Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. This PIN diode is perfect for a wide range of applications, offering unmatched performance and efficiency. Whether you're in the telecommunications industry or working on radar systems, this diode will deliver the results you need. Experience the value and benefits that only Onsemi can provide with the 1SV233-TB-E.

Feature Benefit Bullets

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides good solderability and resistance to corrosion, ensuring reliable performance and longevity of the PIN diode.

Maximum Time At Peak Reflow Temperature (s): 30

The PIN diode can withstand high reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes without the risk of damage.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the PIN diode can be used in high-temperature applications without losing its electrical properties or reliability.

Diode Type: PIN DIODE

The PIN diode is specifically designed for high-frequency and RF applications, offering low capacitance and fast switching speeds.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The positive-intrinsic-negative (PIN) structure of the diode provides better RF performance and higher power handling capabilities compared to other diode types.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in electronic devices, making the PIN diode a dependable choice for RF circuits.

Technical Specifications

PIN Diodes 1SV233-TB-E attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SV233-TB-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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