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BAP64Q,125

NXP Semiconductors

BAP64Q,125 by NXP Semiconductors

The NXP Semiconductors BAP64Q,125 is a PIN diode with a max forward resistance of 1.35 ohm and capacitance of 0.35 pF. It operates in the S band frequency range and is suitable for applications like attenuators due to its complex configuration. The diode has a reverse test voltage of 100 V and can withstand temperatures from -65 to 150 °C.

Median Price

$1.013

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 205 parts In-Stock

1+ parts

$0.853

100+ parts

$0.458

1k+ parts

-

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205

$0.853

$0.458

-

-

Element14

Singapore . 3,293 parts In-Stock

1+ parts

$1.013

100+ parts

$0.645

1k+ parts

$0.423

10k+ parts

-

3,293

$1.013

$0.645

$0.423

-

Mouser Electronics

USA . 9,818 parts In-Stock

1+ parts

$1.040

100+ parts

$0.596

1k+ parts

$0.513

10k+ parts

$0.474

9,818

$1.040

$0.596

$0.513

$0.474

DigiKey

USA . 5,456 parts In-Stock

1+ parts

$1.140

100+ parts

$0.655

1k+ parts

$0.567

10k+ parts

$0.522

5,456

$1.140

$0.655

$0.567

$0.522

Chip1Stop

Japan . 1,362 parts In-Stock

1+ parts

$1.430

100+ parts

$0.520

1k+ parts

$0.438

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-

1,362

$1.430

$0.520

$0.438

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Rochester

USA . 68,225 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.494

10k+ parts

$0.440

68,225

-

$0.595

$0.494

$0.440

Verical

USA . 68,225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.617

10k+ parts

$0.550

68,225

-

-

$0.617

$0.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,458 parts In-Stock

1+ parts

$0.462

100+ parts

-

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4,458

$0.462

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Vyrian

USA . 3,772 parts In-Stock

1+ parts

$0.486

100+ parts

-

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3,772

$0.486

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Flip Electronics

USA . 2,960 parts In-Stock

1+ parts

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2,960

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Anansix

USA . 2,876 parts In-Stock

1+ parts

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2,876

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Distributors (Availability)

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Corphita

USA . 2,598 parts In-Stock

1+ parts

$0.437

100+ parts

-

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2,598

$0.437

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Component Stockers USA

USA . 210,613 parts In-Stock

1+ parts

$0.460

100+ parts

$0.440

1k+ parts

$0.400

10k+ parts

$0.370

210,613

$0.460

$0.440

$0.400

$0.370

Native Components

USA . 230 parts In-Stock

1+ parts

$8.080

100+ parts

-

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230

$8.080

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Northwest PG Solutions

USA . 1,272 parts In-Stock

1+ parts

$8.888

100+ parts

$7.999

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1,272

$8.888

$7.999

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Perfect Parts

USA . 147,840 parts In-Stock

1+ parts

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147,840

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UNI Independent Distributors

Spain . 5,928 parts In-Stock

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5,928

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Continental Prestige Electronics

USA . 5,281 parts In-Stock

1+ parts

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100+ parts

$0.519

1k+ parts

$0.351

10k+ parts

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5,281

-

$0.519

$0.351

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Overview

Discover the power of NXP Semiconductors' BAP64Q,125 PIN Diode, a cutting-edge component that offers unparalleled performance in the S BAND frequency band. Ideal for applications such as attenuators, this diode boasts a reverse test voltage of 100V and a maximum diode capacitance of 0.35 pF. With a dual terminal position and a small outline package style, the BAP64Q,125 is designed for efficiency and reliability. Trust NXP Semiconductors to deliver top-quality, innovative solutions that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and long-lasting.

Frequency Band: S BAND

Suitable for use in the S band frequency range, making it ideal for applications in that specific band.

Maximum Diode Capacitance: 0.35 pF

Low diode capacitance allows for faster response times and higher frequency operation.

Reverse Test Voltage: 100 V

High reverse test voltage ensures durability and protection against reverse bias conditions.

Maximum Power Dissipation: 0.125 W

With a high maximum power dissipation, this product can handle higher power levels without overheating.

Application: ATTENUATOR

Designed specifically for attenuator applications, ensuring performance and efficiency in signal attenuation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for a variety of environments.

Nominal Minority Carrier Lifetime: 1.55 us

Long minority carrier lifetime allows for better signal control and switching speed.

Technical Specifications

PIN Diodes BAP64Q,125 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Application:

ATTENUATOR

Config:

COMPLEX

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.23 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.35 ohm

Diode Resistive Test Current:

100 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.125 W

Reference Standard:

IEC-60134

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP64Q,125 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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