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BAP63LXT/R

NXP Semiconductors

BAP63LXT/R by NXP Semiconductors

BAP63LXT/R by NXP Semiconductors is a surface-mount PIN diode with a max operating temp of 150 °C and a forward resistance of 3.3Ω. It features a nominal capacitance of 0.34 pF, ideal for RF applications. This diode supports up to 50V breakdown voltage, ensuring reliability in circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 4,314 parts In-Stock

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Digiode

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Anansix

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One Stop Electronics

USA . 1,333 parts In-Stock

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UNI Independent Distributors

Spain . 5,866 parts In-Stock

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Unlock unparalleled performance with the BAP63LXT/R from NXP Semiconductors, renowned for quality and innovation. This versatile PIN diode excels in high-frequency applications, delivering reliability even under extreme conditions. With its compact design and superb efficiency, it enhances system performance while minimizing energy loss. Choose BAP63LXT/R for your next project and experience unmatched durability and superior signal integrity that elevate your designs.

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact electronic circuits, making it ideal for space-constrained applications.

Reverse Test Voltage: 0 V

The low reverse test voltage rating indicates that this diode has a low leakage current, ensuring reliable performance in various conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this PIN diode can handle extreme environments, making it suitable for high-temperature applications.

Maximum Diode Forward Resistance: 3.3 ohm

A low forward resistance enhances efficiency and minimizes power loss, making this diode a great choice for RF applications.

Nominal Diode Capacitance: 0.34 pF

Its low capacitance allows for high-frequency operation, making it suitable for applications in RF switching and modulation.

Nominal Minority Carrier Lifetime: 0.32 µs

A nominal minority carrier lifetime of 0.32 µs ensures fast switching speeds, crucial for applications requiring rapid response times.

Minimum Breakdown Voltage: 50 V

The minimum breakdown voltage of 50 V provides robust protection against voltage spikes, enhancing the reliability of the device in demanding conditions.

Diode Resistive Test Frequency: 100 MHz

A test frequency of 100 MHz highlights its ability to perform well in RF applications, ensuring stable operation at higher frequencies.

Diode Resistive Test Current: 0.5 mA

With a test current of 0.5 mA, this diode is energy-efficient and helps to conserve power in low-power circuit applications.

Diode Type: PIN DIODE

As a PIN diode, it offers a combination of high-speed switching and variable resistive characteristics, making it versatile for RF and microwave applications.

Technical Specifications

PIN Diodes BAP63LXT/R attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

50 V

Nominal Diode Capacitance:

.34 pF

Maximum Diode Forward Resistance:

3.3 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Nominal Minority Carrier Lifetime:

.32 us

Maximum Operating Temperature:

150 Cel

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

BAP63LXT/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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