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BAR64-03WE6327

Infineon Technologies

BAR64-03WE6327 by Infineon Technologies

BAR64-03WE6327 by Infineon Technologies is a PIN diode with a max power dissipation of 0.25W and forward resistance of 20 ohm. It operates in the S band frequency range, suitable for applications like attenuators and switching due to its low diode capacitance of 0.17 pF. The package style is small outline, making it ideal for surface mount configurations.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 35,773 parts In-Stock

1+ parts

$0.440

100+ parts

$0.194

1k+ parts

$0.115

10k+ parts

$0.080

35,773

$0.440

$0.194

$0.115

$0.080

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 6,000 parts In-Stock

1+ parts

$0.375

100+ parts

$0.188

1k+ parts

$0.075

10k+ parts

$0.056

6,000

$0.375

$0.188

$0.075

$0.056

Digiode

USA . 631 parts In-Stock

1+ parts

$0.399

100+ parts

-

1k+ parts

-

10k+ parts

-

631

$0.399

-

-

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Vyrian

USA . 162 parts In-Stock

1+ parts

$0.420

100+ parts

-

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-

10k+ parts

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162

$0.420

-

-

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LIBRA Elektronik GmbH

Germany . 42,938 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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42,938

-

-

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Rutronik

Germany . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

9,000

-

-

-

$0.086

Odintec Ltd.

Israel . 9,000 parts In-Stock

1+ parts

-

100+ parts

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9,000

-

-

-

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Dan-Mar Components

USA . 6,000 parts In-Stock

1+ parts

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6,000

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

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3,000

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Netsource Technology, Inc.

USA . 2,945 parts In-Stock

1+ parts

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2,945

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EMSNET

USA . 2,370 parts In-Stock

1+ parts

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100+ parts

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2,370

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Pegasus Components GmbH

Germany . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Ashlea Components Ltd

UK . 1,506 parts In-Stock

1+ parts

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100+ parts

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1,506

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 17,043 parts In-Stock

1+ parts

$0.062

100+ parts

$0.060

1k+ parts

$0.057

10k+ parts

-

17,043

$0.062

$0.060

$0.057

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Corphita

USA . 597 parts In-Stock

1+ parts

$0.378

100+ parts

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597

$0.378

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Native Components

USA . 104 parts In-Stock

1+ parts

$2.010

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104

$2.010

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Northwest PG Solutions

USA . 472 parts In-Stock

1+ parts

$2.211

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472

$2.211

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Perfect Parts

USA . 89,719 parts In-Stock

1+ parts

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89,719

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Metaverse IC Inc.

Canada . 7,550 parts In-Stock

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7,550

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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A-Z Elektronik GmbH

Germany . 1,590 parts In-Stock

1+ parts

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1,590

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Overview

Discover the BAR64-03WE6327 by Infineon Technologies, a top-quality PIN diode that offers unparalleled performance and reliability in a wide range of applications. With a reputation for excellence, Infineon Technologies ensures that this diode meets the highest standards for quality and durability. Ideal for use in attenuators and switching circuits, this diode boasts a low forward resistance and high breakdown voltage, making it a versatile solution for your electronic needs. Experience the value and benefits of the BAR64-03WE6327 today and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Frequency Band: S BAND

Ideal for applications in the S band frequency range, making it suitable for a variety of communication and radar systems.

Maximum Diode Capacitance: 0.35 pF

Low capacitance allows for efficient signal processing and faster response times in switching applications.

Reverse Test Voltage: 0 V

Suitable for use in circuits where reverse voltage protection is not required, simplifying the design process.

Application: ATTENUATOR; SWITCHING

Versatile product that can be used for both attenuating signals and switching between different pathways, offering flexibility in system design.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for use in environments with elevated heat levels.

Diode Type: PIN DIODE

Utilizes a positive-intrinsic-negative structure for improved performance and reliability in high-frequency applications.

Technical Specifications

PIN Diodes BAR64-03WE6327 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Additional Features:

HIGH VOLTAGE

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.17 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

20 ohm

Diode Resistive Test Current:

1 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR64-03WE6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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