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BAP64-04W,115

NXP Semiconductors

BAP64-04W,115 by NXP Semiconductors

BAP64-04W,115 by NXP Semiconductors is a PIN diode with 2 elements in series connected configuration. It operates in S band frequency range and has a max diode capacitance of 0.35 pF. This small outline package is suitable for attenuator and switching applications, with an operating temperature range from -65 to 150°C.

Median Price

$0.204

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Mouser Electronics

USA . 3,667 parts In-Stock

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$0.390

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$0.194

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$0.177

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$0.149

3,667

$0.390

$0.194

$0.177

$0.149

DigiKey

USA . 12,649 parts In-Stock

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$0.430

100+ parts

$0.230

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$0.194

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$0.176

12,649

$0.430

$0.230

$0.194

$0.176

Arrow

USA . 1,982 parts In-Stock

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$0.438

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$0.427

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$0.419

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$0.438

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Verical

USA . 20,587 parts In-Stock

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$0.046

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20,587

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$0.046

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Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

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Rochester

USA . 8,110 parts In-Stock

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$0.196

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$0.162

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$0.145

8,110

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$0.196

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$0.145

Chip1Stop

Japan . 1,918 parts In-Stock

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-

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$0.213

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$0.192

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$0.176

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$0.213

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$0.176

Farnell

UK . 195 parts In-Stock

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$0.177

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Element14

Singapore . 195 parts In-Stock

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$0.186

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$0.145

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$0.132

195

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$0.132

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Digiode

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Nova Conductors

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Maritex

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$0.947

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$0.344

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$0.260

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2,690

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Chip Stock

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Vyrian

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$0.085

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Corphita

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Overview

Discover the unparalleled quality and reliability of NXP Semiconductors with the BAP64-04W,115 PIN Diode. This versatile component is ideal for applications such as attenuators and switching, offering exceptional performance in the S Band frequency range. With a maximum power dissipation of 0.24 W and a minimum breakdown voltage of 100 V, this diode ensures seamless operation even in demanding environments. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds expectations, providing you with the value and peace of mind you deserve. Elevate your projects with the BAP64-04W,115 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a longer lifespan.

Frequency Band: S BAND

Suitable for use in S-band applications, making it compatible with a wide range of systems.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for various environments.

Minimum Operating Temperature: -65 °C

Capable of operating in extremely low temperatures, expanding its range of applications.

Maximum Power Dissipation: 0.24 W

Efficiently dissipates power, preventing overheating and potential damage to the diode.

Diode Type: PIN DIODE

PIN diodes offer fast switching speed and low distortion, making them ideal for high-frequency applications.

Technical Specifications

PIN Diodes BAP64-04W,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

100 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.52 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.35 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.24 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP64-04W,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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